2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) 2014
DOI: 10.1109/pvsc.2014.6925011
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Mapping spectroscopic ellipsometry of CdTe solar cells for property-performance correlations

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Cited by 10 publications
(10 citation statements)
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“…Through-the-glass spectroscopic ellipsometry P. Koirala et al and 26 ± 8 nm, respectively, for the as-deposited sample of this study [18]. Given that the 17 best fit key structural and optical property parameters highlighted in Figure 3 and Table II are all deduced simultaneously, it is of interest to corroborate their values as broadly as possible.…”
Section: Among the Optical Property Parameters Inmentioning
confidence: 65%
See 1 more Smart Citation
“…Through-the-glass spectroscopic ellipsometry P. Koirala et al and 26 ± 8 nm, respectively, for the as-deposited sample of this study [18]. Given that the 17 best fit key structural and optical property parameters highlighted in Figure 3 and Table II are all deduced simultaneously, it is of interest to corroborate their values as broadly as possible.…”
Section: Among the Optical Property Parameters Inmentioning
confidence: 65%
“…These differences are interpreted in terms of compressive stress and grain boundary scattering, the latter providing a grain size estimate, with both being near the optical detection limits. This optical analysis capability is more powerful for as‐deposited CdTe prepared by sputtering for which the stress is larger and the mean path is shorter, specifically 0.52 ± 0.07 GPa and 26 ± 8 nm, respectively, for the as‐deposited sample of this study .…”
Section: Resultsmentioning
confidence: 93%
“…A wealth of information can be extracted from these types of RTSE measurements applied at a single spot on a sample surface, but additional property variations related to sample non-uniformity have also been obtained by ex situ mapping spectroscopic ellipsometry (SE) [ 23 , 24 , 25 , 26 ]. In mapping SE, the sample and multichannel ellipsometer, similar to the instrument used in RTSE studies, are mechanically translated with respect to the each other in one or more dimensions to obtain ellipsometric spectra as a function of spatial position.…”
Section: Introductionmentioning
confidence: 99%
“…In the case of Si:H, simplified structural models based on results from RTSE measurements are applied to probe subtle variations in material opto-electronic response such as the band gap of a-Si:H, film thickness, surface roughness thickness, and nanocrystallite fraction in mixed phase materials. These types of measurements have been applied to Si:H [ 23 , 24 ], cadmium telluride [ 26 ], and copper indium gallium diselenide [ 25 ] PV devices ranging from tens of square centimeters on the laboratory scale to full industrially prepared panels. Thus, improvements in understanding and quantifying the structural transition of Si:H from amorphous to nanocrystalline, as obtained from single spot in situ RTSE measurements, can be applied to develop more advanced optical models and more thoroughly analyze mapping SE measurements collected over larger areas.…”
Section: Introductionmentioning
confidence: 99%
“…Novel methods for control of deposition processes were developed. [8] UT will deposit baseline CdTe solar cells for contacts then deposited at UI and ODU. In addition completed devices with conventional back contacts will be produced and characterized at UT for comparison with the novel contact options.…”
Section: I21 Subtask 1: Deposition Of Cdte Solar Cellsmentioning
confidence: 99%