2019
DOI: 10.1038/s41563-019-0467-4
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Mapping spin–charge conversion to the band structure in a topological oxide two-dimensional electron gas

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Cited by 134 publications
(162 citation statements)
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References 38 publications
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“…We observe that α R increases from 2 meVÅ up to 50 meVÅ at V g = 120 V, where it reaches its maximum value. Beyond this, α R rapidly decreases, reaching a value of 20 meVÅ at V g = 150 V. This nonmonotonic behaviour is reminiscent of recent results in SrTiO 3 -based 2DEGs, where the spin-to-charge current conversion efficiency [37] and spin current generation and detection [32] were modulated up and down using gate voltages. The values extracted are in good agreement with the α R reported in other studies for the LAO/STO system in similar carrier density regimes [33,38].…”
Section: Resultssupporting
confidence: 68%
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“…We observe that α R increases from 2 meVÅ up to 50 meVÅ at V g = 120 V, where it reaches its maximum value. Beyond this, α R rapidly decreases, reaching a value of 20 meVÅ at V g = 150 V. This nonmonotonic behaviour is reminiscent of recent results in SrTiO 3 -based 2DEGs, where the spin-to-charge current conversion efficiency [37] and spin current generation and detection [32] were modulated up and down using gate voltages. The values extracted are in good agreement with the α R reported in other studies for the LAO/STO system in similar carrier density regimes [33,38].…”
Section: Resultssupporting
confidence: 68%
“…Details of the tight-binding modelling can be found in Ref. [37]. We start by calculating α R = ∆k( 2 /2m * ) directly from the energy spectrum, where ∆k = k outer − k inner gives the difference of two neighbouring subbands.…”
Section: Resultsmentioning
confidence: 99%
“…In summary, we have demonstrated the realization of a 2DEG based on ferroelectric Ca:STO, with gate-tunable transport properties and different resistance states at remanence. Our results bring a new degree of freedom to functionalize further STO 2DEGs and control the spin-charge interconversion properties 12,44 and the superconducting response 22,45 by ferroelectricity. Future studies may aim at calculating and characterizing the electronic structure of such ferroelectric 2DEGs, explore the role of Casubstitution on the 2DEG properties, and possibly seek for room-temperature ferroelectricity, e.g.…”
mentioning
confidence: 90%
“…For the last 15 years, STO has also served as a platform to generate oxide two-dimensional electron gases (2DEGs) through the epitaxial growth of a polar perovskite such as LaAlO3 (LAO) 10 , the deposition of thin reactive metal films (such as Al) 11,12 or by fracturing in vacuum 13 . Although the precise mechanisms remain debated 14 , the formation of this n-type 2DEG often involves oxygen vacancies and is reminiscent of the ease by which bulk STO can be doped n-type.…”
Section: Introductionmentioning
confidence: 99%
“…It can also be the basis of logic devices 22 akin to the magnetoelectric spin-orbit (MESO) device proposed by Intel 23 , but without resorting to a multiferroic to switch the ferromagnet. To experimentally demonstrate the non-volatile electrical control of the spin-charge conversion, we use SrTiO3 (STO) 2DEGs, generated by the deposition of a film of Al onto a STO single crystal 24,25 . Indeed, STO 2DEGs exhibit a sizeable Rashba SOC 10 with a very high conversion efficiency 25,26 .…”
mentioning
confidence: 99%