2022
DOI: 10.1038/s41467-022-29702-w
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Mapping the energy level alignment at donor/acceptor interfaces in non-fullerene organic solar cells

Abstract: Energy level alignment (ELA) at donor (D) -acceptor (A) heterojunctions is essential for understanding the charge generation and recombination process in organic photovoltaic devices. However, the ELA at the D-A interfaces is largely underdetermined, resulting in debates on the fundamental operating mechanisms of high-efficiency non-fullerene organic solar cells. Here, we systematically investigate ELA and its depth-dependent variation of a range of donor/non-fullerene-acceptor interfaces by fabricating and ch… Show more

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Cited by 59 publications
(52 citation statements)
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“…The RSOXS measurement thus provides additional evidence of hole transport in Y6 and explains why PTB7‐Th:Y6 QHJ outperforms PM6:Y6 QHJ. As hinted at in the TA measurement, interfacial effects such as dipolar interactions, [ 52 ] will affect recombination kinetics. Band‐bending induced by quadrupolar fields [ 32 ] could possibly also enhance charge transport by physically/energetically separating electrons and holes within the Y6 phase itself.…”
Section: Resultsmentioning
confidence: 99%
“…The RSOXS measurement thus provides additional evidence of hole transport in Y6 and explains why PTB7‐Th:Y6 QHJ outperforms PM6:Y6 QHJ. As hinted at in the TA measurement, interfacial effects such as dipolar interactions, [ 52 ] will affect recombination kinetics. Band‐bending induced by quadrupolar fields [ 32 ] could possibly also enhance charge transport by physically/energetically separating electrons and holes within the Y6 phase itself.…”
Section: Resultsmentioning
confidence: 99%
“…It is striking that the EL emission intensity of the PHJ device is two orders of magnitude higher than that of the BHJ device (Figure S12c,d, Supporting Information), resulting in an EQE EL of 5.3 × 10 −3 % for the PHJ device (Figure S12e, Supporting Information). This further demonstrates that, in IT4F/PM6 heterojunctions (a representative small highest occupied molecular orbital (HOMO) offset system), [ 27 ] holes injected into the PM6 side can be easily transferred to the IT4F layer where they recombine with a relatively high‐radiative yield. This dominance of charge recombination within the IT4F layer of the PHJ devices is most likely the reason for the only modest increase in charge carrier lifetimes in the PHJ relative to the BHJ observed in our TPV analyses, despite the large reduction in interfacial surface area.…”
Section: Resultsmentioning
confidence: 89%
“…36 The reason for this is not clear yet, but we emphasize here that the ionization energy from UPS is very sensitive to the electrostatics at the surface, which will most likely be different in neat and blend films. 91 Therefore, we point out that experiments on neat films have to be taken with caution when they are used to explain the energetics of blend films. To actually access the HOMO energies of the individual components in blend films, we subtract the (scaled) reference valence band spectrum of neat PM6 from the blend spectrum (see Fig.…”
Section: Comparison Of Energy Levels Homo Offsets and Transport Gapsmentioning
confidence: 98%