2023
DOI: 10.1063/5.0142217
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Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique

Abstract: We demonstrate that the multi-photon absorption edge transient-current technique (edge-TCT) can be used to three-dimensionally map the impact of defect distributions on device characteristics in situ inside the bulk of silicon carbide devices. A ∼5 μm wide defect-rich layer induced by proton irradiation at a depth of ∼27 μm was investigated in 4H-SiC samples and compared to the pristine case. Edge-TCT enables mapping of the position of the implantation peak as well as to identify the space charge polarity arou… Show more

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