Marked Enhancement of Optical Kerr Signal in Proportion to Fourth Power of Quality Factor of a GaAs/AlAs Multilayer Cavity

Kitada, Takahiro; Kanbara, Toshiyuki; Yano, Shinsuke; Morita, Ken; Isu, Toshiro

doi:10.1143/jjap.48.080203

Cited by 25 publications

(22 citation statements)

References 11 publications

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“…It has been thus reported that the Kerr signal is proportional to Q 4 in the numerical simulation [75].…”

Section: Kerr Nonlinearitymentioning

confidence: 84%

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Photonic switching devices based on semiconductor nano-structures

Jin¹,

Wada²

2014

J. Phys. D: Appl. Phys.

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Abstract:Focusing and guiding light into semiconductor nanostructures can deliver revolutionary concepts for photonic devices, which offer a practical pathway towards next-generation power-efficient optical networks. In this review, we consider the prospects for photonic switches using semiconductor quantum dots (QDs) and photonic cavities which possess unique properties based on their low dimensionality. The optical nonlinearity of such photonic switches is theoretically analysed by introducing the concept of a field enhancement factor. This approach reveals drastic improvement in both power-density and speed, which is able to overcome the limitations that have beset conventional photonic switches for decades. In addition, the overall power consumption is reduced due to the atom-like nature of QDs as well as the nano-scale footprint of photonic cavities. Based on this theoretical perspective, the current state-of-the-art of QD/cavity switches is reviewed in terms of various optical nonlinearity phenomena which have been utilized to demonstrate photonic switching. Emerging techniques, enabled by cavity nonlinear effects such as wavelength tuning, Purcell-factor tuning and plasmonic effects are also discussed.

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“…It has been thus reported that the Kerr signal is proportional to Q 4 in the numerical simulation [75].…”

Section: Kerr Nonlinearitymentioning

confidence: 84%

“…These two effects can doubly enhance the switching performance in certain configuration as the one we will introduce in the Kerr nonlinearity measurement in Sec.3 [75].…”

Section: Enhancement Of Optical Nonlinearitymentioning

confidence: 97%

Photonic switching devices based on semiconductor nano-structures

Jin¹,

Wada²

2014

J. Phys. D: Appl. Phys.

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“…We also experimentally demonstrated an ultrafast response of the optical Kerr signal of less than one picosecond [8], which was limited by the photon lifetime of the cavity. Furthermore, we recently demonstrated the strong dependence of the optical Kerr signals on the Q-factor of the micro-cavity [9]. These results indicate that the strongly enhanced optical intensity due to the cavity effects plays an important role in the nonlinear optical response of the materials in the structure.…”

mentioning

confidence: 75%

Optical Kerr signals of GaAs/AlAs multilayer cavities with two‐photon resonant quantum wells in the half‐wavelength layer

Isu

Kanbara

Takahashi

et al. 2010

Phys. Status Solidi (c)

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Optical Kerr signals from GaAs/AlAs multilayer micro‐cavities with GaAs/AlGaAs multi‐quantum wells (MQW) in the half‐wavelength cavity layer were investigated. The cavity‐mode‐wavelengths were set at the resonance region of two‐photon absorption of the MQWs in the 1.5‐μm band. The measured intensities of the signals depended strongly on the cavity‐mode wavelength, although the cavity layers including the MQW and multilayers maintained approximately the same structure. The nonlinearity of the MQW is considered to vary considerably at the resonant wavelength of the two‐photon absorption. The results indicate that the optical Kerr signal of the multilayer micro‐cavity is dominated by the nonlinearity of the cavity layer, although the cavity layer is only a small part of the total cavity thickness. This experimentally confirms the results of a previous simulation study on the multilayer cavities. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…We have demonstrated the enhancement of the optical Kerr signal from the cavity with InAs QDs compared with that without QDs. 26) Using improved techniques, we have investigated the FWM in a GaAs=AlAs triple-coupled cavity with 3.4 ML InAs QDs, which were embedded in a strain-relaxed In 0.35 Ga 0.65 As layer to extend the resonance wavelength above 1.5 µm. 27) An equivalent effective optical thickness of three cavity layers was realized using a controlled lateral thickness variation across the wafer.…”

Section: Introductionmentioning

confidence: 99%

GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

Lu¹,

Ota²,

Kumagai³

et al. 2017

Jpn. J. Appl. Phys.

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We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω 1 , ω 2 , and ω 3 were used for efficient wavelength conversion via a four-wave mixing (FWM) process. Identical frequency separation between two adjacent modes (ω 1 % ω 2 = ω 2 % ω 3 ) was successfully realized using a controlled lateral thickness variation across the wafer. Time-resolved FWM signals from the triple-coupled multilayer cavity were measured using 100 fs laser pulses. The incident laser pulses were divided into two pulses and each of them was spectrally shaped individually so that the input and control pulses only covered the ω 1 and ω 2 modes, respectively. The wavelength-converted FWM signal with a frequency of ω 3 (= 2ω 2 % ω 1 ) was clearly observed when the sample was simultaneously irradiated with the input and control laser pulses.

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Marked Enhancement of Optical Kerr Signal in Proportion to Fourth Power of Quality Factor of a GaAs/AlAs Multilayer Cavity

Cited by 25 publications

References 11 publications

Photonic switching devices based on semiconductor nano-structures

Photonic switching devices based on semiconductor nano-structures

Optical Kerr signals of GaAs/AlAs multilayer cavities with two‐photon resonant quantum wells in the half‐wavelength layer

GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

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