Mask process simulation for mask quality improvement

Takahashi, Nobuyasu; Goto, So; Tsunoda, Dai; Shin, So-Eun; Lee, Sukho; Shon, Jungwook; Park, Ji-Soong

doi:10.1117/12.2196713

Search citation statements

Order By: Relevance

Paper Sections

Select...

Experimental Methods1

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2022

2023

Publication Types

Select...

Other2

Relationship

Self Cite1

Independent1

Authors

Journals

Cited by 2 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These MPC outputs were used for simulation experiments and exposure experiments. In simulation experiments, mask contour was simulated on MPC outputs [5]. In exposure experiments, MPC outputs were exposed on mask, and contour was extracted from SEM images.…”

Section: Experimental Methodsmentioning

confidence: 99%

Improvements on pattern fidelity at high curvature region of curvilinear mask with a novel method of MPC

Kaneko,

Fujii,

Ono

et al. 2023

Photomask Technology 2023

Self Cite

View full text Add to dashboard Cite

Section: Experimental Methodsmentioning

confidence: 99%

Improvements on pattern fidelity at high curvature region of curvilinear mask with a novel method of MPC

Kaneko,

Fujii,

Ono

et al. 2023

Photomask Technology 2023

Self Cite

View full text Add to dashboard Cite

“…However studies on curvilinear pattern modeling have not been presented actively. One possible solution we have is contour modeling which uses contour instead of CD measured in a perpendicular manner [4][5]. Contour can be inputted by extracting vertices information along the contour.…”

Section: Introductionmentioning

confidence: 99%

Assessment of contour modeling readiness for curvilinear masks

Lee

Choi

et al. 2022

Photomask Technology 2022

View full text Add to dashboard Cite

Curvilinear pattern has been introduced as one of solutions for complex and challenging next generation lithography. However mask process correction (MPC) has been developed originally for Manhattan pattern. MPC now is using only orthogonal CD measurement information (so-called conventional modeling) which is not sufficient to represent all information needed to curvilinear pattern. In this reason a new solution for MPC is required for curvilinear pattern. Contour modeling is one of the known modeling techniques, which uses information of many vertices along pattern contour instead of orthogonal CD values. However contour modeling has not been evaluated yet in mass production level. As an evaluating procedure, we introduce a quality assurance (QA) method using virtual SEM contour. By adopting this QA method, we can analyze errors only from modeling itself separated from process induced errors. Moreover, aspect of error budget can be estimated by adding various errors on purpose. In this paper, we present the QA results of contour modeling and the comparison to the conventional modeling. Some discussion and future works will be followed.

show abstract

Mask process simulation for mask quality improvement

Cited by 2 publications

References 4 publications

Improvements on pattern fidelity at high curvature region of curvilinear mask with a novel method of MPC

Improvements on pattern fidelity at high curvature region of curvilinear mask with a novel method of MPC

Assessment of contour modeling readiness for curvilinear masks

Contact Info

Product

Resources

About