Maskless Etching using Atmospheric Pressure Non-Thermal Surface Discharge Plasma

Hamada, Toshiyuki; Mizumoto, Takayuki; Arimura, Takuya; Sakoda, Tatsuya

doi:10.1541/ieejfms.130.907

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“…Herein, we propose the fabrication of antireflection films with etched electrode grooves on single crystalline silicon solar-cell substrates using surface-discharge plasma. The proposed technique is very economical because nonequilibrium plasma can be generated under normal atmospheric pressure without any masking material [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Etching Characteristics of SixNy Film on Textured Single Crystalline Silicon Surface Using Ar/CF4 and He/CF4 Surface-Discharge Plasma

et al. 2020

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In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (SixNy) films using surface-discharge plasma under Ar/CF4 and He/CF4 gases on the basis of differences in the widths of the electrode grooves etched on the SixNy film. The widths of the grooves etched using Ar as the carrier gas were narrower than those etched using He, and the etching speed achieved using Ar was higher than that achieved using He. Furthermore, the electrode groove created by surface-discharge plasma gradually widened as etching time and applied voltage increased.

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