Mass Action and Concentration Dependence of Chemical Potential

Job, Georg; Rüffler, Regina

doi:10.1007/978-3-319-15666-8_6

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“…[14] As the concentration of N atoms at the interface increases, the chemical potential of N atoms increases, thereby facilitating a high-density N incorporation into Gr. [15] It could be concluded that the degree of N incorporation in Gr is related to the GaN decomposition degree, which can be controlled by adjusting the temperature ramp-up process in MOCVD. Even though nucleation at a low temperature (750 °C) could help to preserve the Gr (Figure S2a, Supporting Information), such high defect density low-temperature buffer layer is unnecessary for homoepitaxy and inevitably deteriorates the crystal quality of subsequent epilayers.…”

Section: Resultsmentioning

confidence: 99%

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Graphene‐Assisted Epitaxy of High‐Quality GaN Films on GaN Templates

Feng

Zhang

Yang

et al. 2022

Advanced Optical Materials

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The key mechanism lies in that the potential field of substrates can penetrate Gr to govern the lattice arrangement of epilayers, while Gr weakens the substrateepilayer coupling. [2e,3] Up until now, most of the epitaxy of nitrides via Gr is performed on heterogeneous substrates, such as sapphire. [2a,d,4] As shown in Table S1, Supporting Information, large lattice and thermal mismatches between sapphire and nitrides still exist, which inevitably leads to a high density of dislocations in nitrides, and thus, degrades the performance of optoelectronic devices by forming non-radiation centers and leakage channels. [2d,5] Thus, the practical application of Gr-assisted epitaxy of nitrides for high-performance nitride-based optoelectronic devices is still hindered.

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Section: Resultsmentioning

confidence: 99%

“…[ 14 ] As the concentration of N atoms at the interface increases, the chemical potential of N atoms increases, thereby facilitating a high‐density N incorporation into Gr. [ 15 ]…”

Section: Resultsmentioning

confidence: 99%