Mass spectrometric investigation of the low-pressure pyrolysis of diborane

Fehlner, Thomas P.; Fridmann, S. A.

doi:10.1021/ic50092a016

Cited by 21 publications

(13 citation statements)

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“…In this case, BH 3 is the active boron containing specie for the deposition of B x C films. [14,15] It is reasonable to assume that the elimination of ethyl groups from the TEB molecule is temperature dependent, and thus at higher temperatures more BH 3 is formed. The observed increase in boron content at higher deposition temperature in argon can be explained by an increasing degree of TEB decomposition and hence a higher BH 3 formation.…”

Section: Discussionmentioning

confidence: 99%

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Pedersen

Höglund

Birch

et al. 2012

Chemical Vapor Deposition

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Abstract:Thin, amorphous boron-carbon films were deposited at low temperature (400-600 °C) by thermally activated CVD using the organoborane triethylboron (TEB) as a single precursor. Two different carrier gases were tested. At 600 °C using argon as carrier gas the deposition rate was close to 1 µm/h. The film had a density of 2.14 g/cm 3 with a B/C-ratio of 3.7. When hydrogen was used as carrier gas the film density was 2.42 g/cm 3 , the B/C ratio 4.6 and the deposition rate 0.35 µm/h. The hydrogen content in the films was about 3-4 at%, regardless of deposition ambient and varied only with the deposition temperature. In addition, both the film composition and the film density were found to vary significantly with the deposition temperature and the deposition ambient. Based upon these results, a deposition mechanism for the growth of boroncarbon films from TEB, where the TEB molecule is decomposed to BH 3 and hydrocarbons, is suggested.

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Section: Discussionmentioning

confidence: 99%

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Pedersen

Höglund

Birch

et al. 2012

Chemical Vapor Deposition

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“…The chemistry of B 2 H 6 pyrolysis has been studied experimentally using mass spectroscopy to analyze reaction products as a function of temperature [26][27][28][29][30][31][32][33][34][35]. The possible gas-phase chemical reactions are very complex and include the formation of several high-order boranes (B 3 H 7 , B 4 H 10 and B 5 H 11 ).…”

Section: Chemistry Modelmentioning

confidence: 99%

“…The possible gas-phase chemical reactions are very complex and include the formation of several high-order boranes (B 3 H 7 , B 4 H 10 and B 5 H 11 ). The work of Fehlner et al [28] and Mappes et al [35] investigated the formation of solid boron from diborane, however, and concluded that the dominant boron hydride gas-phase species is BH 3 . Recent modeling studies of the intentional doping of Si thin films, using B 2 H 6 as a dopant source gas, have also indicated that the primary gas-phase reaction pathways are the decomposition of B 2 H 6 to BH 3 and the subsequent recombination back to B 2 H 6 [9,[11][12][13][14][36][37][38] as shown in reactions G-1 and G-2 in Table 2.…”

Section: Chemistry Modelmentioning

confidence: 99%

Modeling studies of the chemical vapor deposition of boron films from B2H6

Lamborn

Snyder

et al. 2007

Journal of Crystal Growth

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“…[11][12][13][14] The possible gas-phase chemical reactions are very complex and include the formation of several high-order boranes (B 3 H 7 , B 4 H 10 , and B 5 H 11 ). The work of Fehlner et al, [15][16][17][18] Baylis et al, 19 and Mappes et al 20 specifically investigated the formation of solid boron from diborane and concluded that the dominant boron hydride gas-phase species is BH 3 . Modeling studies of the intentional doping of Si thin films, using B 2 H 6 as a dopant source gas, have also indicated that the primary gas-phase reaction pathways are the decomposition of B 2 H 6 to BH 3 (2012) unimolecular decomposition and recombination reactions are the energetically favorable reaction pathways 24,26 B 2 H 6 ðgÞ !…”

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confidence: 99%

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

2012

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Surface reaction mechanisms are investigated to determine the activation energies of pure boron (PureB) layer deposition at temperatures from 350 C to 850 C when using chemical-vapor deposition from diborane in a commercial Si/SiGe epitaxial reactor with either hydrogen or nitrogen as carrier gas. Three distinguishable regions are identified to be related to the dominance of specific chemical reaction mechanisms. Activation energies in H 2 are found to be 28 kcal/mol below 400 C and 6.5 kcal/mol from 400 C to 700 C. In N 2 , the value decreases to 2.1 kcal/mol for all temperatures below 700 C. The rate of hydrogen desorption is decisive for this behavior. Pure boron (PureB) layer depositions have in recent years been applied for creating the p þ -region of extremely shallow, less than 10-nm deep, silicon p þ n junction diodes for a number of leading-edge device applications. 1 Particularly impressive performance has been achieved for the application to bulk-Si photodiodes for detecting low penetration-depth beams. [2][3][4][5] Ideal diode characteristics have been achieved for deposition temperatures in the 400 C-700 C range. The option of depositing at temperatures below $500 C, which together with the fact that the deposition is conformal and highly selective to Si, makes PureB technology highly compatible with amorphous-/polysilicon-/ crystalline-silicon thin-film device processing. Moreover, these properties also make it an attractive process for creating junctions on silicon nanowires and advanced CMOS (complementary metal-oxide-semiconductor) transistors including source/drain in p-type FinFETs. 6,7 These applications require a sub-3-nm thick layer to avoid excess series resistance through the high-resistivity PureB layer.In the present work, the deposition is performed in a commercial Si/SiGe epitaxial reactor by exposing the Si surface to diborane (B 2 H 6 ). At 700 C, in the first few seconds of exposure, the boron atoms interact with the Si surface sites to quickly build up something like an atomic layer plane, and upon further deposition, the boron coverage readily exceeds one monolayer (1 ML). After this, the boron atoms will be deposited on a full PureB surface, which is a process that has a much slower, well-controlled deposition rate. In the past, it has been shown that less than 2-nm-thick layers can be deposited with good reliability and uniformity by a suitable adjustment of deposition parameters such as deposition time, temperature, partial pressures, and flow rates. 8 In this paper, an investigation is presented of the surface reaction mechanisms and activation energies of PureB layer deposition in the temperature range of 350 C to 850 C. At the lower temperatures, the carrier gas has a large influence on the ability to create the first full boron coverage of the Si. Nevertheless, by first creating a full PureB coverage at 700 C, which is smooth and uniform, and then proceeding with the low-temperature depositions, the boron-on-boron activation energies could be determined over the whole temp...

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Mass spectrometric investigation of the low-pressure pyrolysis of diborane

Cited by 21 publications

References 0 publications

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Low Temperature CVD of Thin, Amorphous Boron‐Carbon Films for Neutron Detectors

Modeling studies of the chemical vapor deposition of boron films from B2H6

Temperature dependence of chemical-vapor deposition of pure boron layers from diborane

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