Material and technology developments of the totally sputtering-made p/n GaN diodes for cost-effective power electronics

Effect of Temperature Dependence on Electrical Characterization of <i>p-n</i> GaN Diode Fabricated by RF Magnetron Sputtering

“…The p-GaN shows the dotted pattern, which indicates the p-GaN has the tendency to become single crystal-like. In addition, the XRD results from our previous indicate that full-width at half-maximum (FWHM) at (10 11) is 0.30 for pure n-GaN and 0.25 for p-Mg-doped GaN at 10% [13]. The addtion of 10% Mg improved slightly the structure of GaN.…”

“…As a result, they were found to be N d = 5.8 × 10 17 cm −3 and μ = 11 cm 2 /Vs for n-GaN film and N p = 2.1 × 10 17 cm −3 and μ = 26 cm 2 /Vs for p-GaN films. In our previous study on materials development, the band gap E g values of n-GaN deposited at 200˚C and p-GaN deposited at 400˚C were found to be 2.99 and 2.96 eV, respectively [12] [13].…”

“…The Mg content of (Mg-GaN) cermet targets was 10% [13]. The RF power was kept at 150 W under the mixture of Ar and N 2 gases at a flow rate of 5 sccm for each.…”

“…Aluminum layer was sputtered at 200˚C for 30 min with a pure Al target. During Al deposition, only Ar gas was used at a flow rate of 5 sccm meanwhile the RF power was kept at 80 W. The detailed experimental procedure for depositing the GaN films can be referred to our previous work [12] [13].…”

Temperature-dependent electrical properties of the sputtering-made n-InGaN/p-GaN junction diode with a breakdown voltage above 20V

“…The advantages of using the sputtering technique include lower deposition temperature, low equipment cost, and secure working atmosphere without using the toxic metal-organic precursors and ammonia [10,11]. The current-voltage (I-V) characteristics of diodes at different testing temperatures were used to identify its performance.…”