Material characteristics and chemical–mechanical polishing of aluminum alloy thin films

Wang, Y.L; Wu, Jun; Liu, C.W; Wang, T.C; Dun, Jowei

doi:10.1016/s0040-6090(98)01200-0

Cited by 29 publications

(11 citation statements)

References 9 publications

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“…At the same time, because the speciation of Al(H 2 O) 4 OH 2þ is fairly restrained in moderately acidic media [53], it should be possible to avoid uncontrolled dissolution (dishing of Al) of this ion at pH ¼ 4.0. This finding is consistent with some previous studies, where the pH setting of 4.0 was considered optimum for Al-CMP under a range of experimental conditions [12,15]. If AA is used for controlling galvanic corrosion effects in Al CMP, the removal chemistry of this additive should also be considered for post-CMP cleaning.…”

Section: Some Ph Specific Aspects Of Al Cmpsupporting

confidence: 91%

Minimizing the effects of galvanic corrosion during chemical mechanical planarization of aluminum in moderately acidic slurry solutions

Shi

Rock

Türk

et al. 2012

Materials Chemistry and Physics

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Section: Some Ph Specific Aspects Of Al Cmpsupporting

confidence: 91%

Minimizing the effects of galvanic corrosion during chemical mechanical planarization of aluminum in moderately acidic slurry solutions

Shi

Rock

Türk

et al. 2012

Materials Chemistry and Physics

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“…If the CMP is operated in an undesirable region, it may lead to non-uniformity, surface damage and / or degradation in the removal rate (RR). This is especially true for the copper CMP with hydrogen peroxide (H O )-based slurry, because the removal rate is a 2 2 non-monotonic function of the oxidizer (H O ) concentration [8,10]. This may lead to severe 2 2 manufacturing problems, because, during operation, the concentration of the oxidizer decreases gradually, and, if the process is operated at a concentration sensitive region, a significant variation in the RR may result.…”

Section: Introductionmentioning

confidence: 99%

Robust operation of copper chemical mechanical polishing

Kao

Shen³

2003

Microelectronic Engineering

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“…Most peaks shown are similar, although there were some changes between 230 and 300 eV where C and K were found on the Cu 2. The C was from the polishing pad as reported in the previous study (104,105) and K was used as a dispersion addition in the polishing slurry. The counts obtained depend on the depth of the photoelectrons so that the exact concentration of the surface elements is approximate.…”

Section: Xps Analysismentioning

confidence: 99%

Interfacial Forces in Chemical-Mechanical Polishing

Liang

2009

Advanced Tribology

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The demand for microelectronic device miniaturization requires new concepts and technology improvement in the integrated circuits fabrication. In last two decades, Chemical-Mechanical Polishing (CMP) has emerged as the process of choice for planarization. The process takes place at the interface of a substrate, a polishing pad, and an abrasive containing slurry. This synergetic process involves several forces in multilength scales and multi-mechanisms. This research contributes fundamental understanding of surface and interface sciences of microelectronic materials with three major objectives. In order to extend the industrial impact of this research, the chemical-mechanical polishing (CMP) is used as a model system for this study. The first objective of this research is to investigate the interfacial forces in the CMP system. For the first time, the interfacial forces are discussed systematically and comparatively so that key forces in CMP can be pinpointed. The second objective of this research is to understand the basic principles of lubrication, i.e., fluid drag force that can be used to monitor, evaluate, and optimize CMP processes. New parameters were introduced to include the change of material properties during CMP. Using the experimental results, a new equation was developed to understand the principle of lubrication behind the CMP. The third objective is to study the synergy of those interfacial forces with electrochemistry. The electro-chemical-mechanical polishing (ECMP) of copper was studied. Experiments were conducted on the tribometer in combination with a potentiostat. Friction coefficient was used to monitor the polishing process and correlated with the wear behavior of post-CMP samples. Surface characterization was performed using AFM, SEM, and XPS techniques. Results from experiments were used to generate a new wear model, which provided insight from CMP iv mechanisms. The ECMP is currently the newest technique used in the semiconductor industries. This research is expected to contribute to the CMP technology and improve its process performance. This dissertation consists of six chapters. The first chapter covers the introduction and background information of surface forces and CMP. The motivation and objectives are discussed in the second chapter. The three major objectives which include approaches and expected results are covered in the next three chapters. Finally chapter VI summarizes the major discovery in this research and provides some recommendations for future work. v DEDICATION To my mother, for her unconditional love, affection and support. vi ACKNOWLEDGEMENTS First and foremost, I would like to express my deepest gratitude to my academic advisor, Dr. Hong Liang. She taught me how to become a good researcher and provided an independent environment to assist my growth. She also gave me countless supports and encouragements during my last four years of study at Texas A&M University. I also want to thank her for her great patience and invaluable directions in the preparation of this dis...

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Material characteristics and chemical–mechanical polishing of aluminum alloy thin films

Cited by 29 publications

References 9 publications

Minimizing the effects of galvanic corrosion during chemical mechanical planarization of aluminum in moderately acidic slurry solutions

Minimizing the effects of galvanic corrosion during chemical mechanical planarization of aluminum in moderately acidic slurry solutions

Robust operation of copper chemical mechanical polishing

Interfacial Forces in Chemical-Mechanical Polishing

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