Material Characterization of Advanced Cement-Based Encapsulation Systems for Efficient Power Electronics with Increased Power Density

Boettge, Bianca; Naumann, Falk; Behrendt, S.; Scheibel, M.G.; Kaessner, S.; Klengel, Sandy; Petzold, Matthias; Nickel, Klaus G.; Hejtmann, Georg; Miric, Anton-Zoran; Eisele, R.

doi:10.1109/ectc.2018.00194

Cited by 13 publications

(9 citation statements)

References 13 publications

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“…Calcium aluminate cement ceramic composites, addressed in Refs. [9] and [10], contain cement as the binding phase. In contrast to CCC, the matrix of the CE encapsulant is characterized by a hydraulic ceramic binder, named reactive alumina [11].…”

Section: A Materialsmentioning

confidence: 99%

“…Because of the incompatibility of CCC with the chip surfaces, improvements on the encapsulant chemistry had to be considered [10]. The result of this material continued on page 10 development represents the introduced CE material.…”

Section: A Encapsulation Materials Properties Microstructurementioning

confidence: 99%

“…Therefore, novel ceramic encapsulation (CE) materials, based on calcium aluminate cement (CAC) and phosphate cement (PC), with increased thermal conductivity above 5 W/(m•K), temperature stability up to 300°C, and enhanced thermomechanical properties have been developed to realize maximum efficiency and reliability for future power electronic devices [9,10]. It has been pointed out that the processing of CAC-ceramic composites (CCC) or similar encapsulants, compared with common filled epoxy resins or silicone gels, is significantly simplified.…”

Section: R I Introductionmentioning

confidence: 99%

“…However, the dehydration behavior of CCC revealed critical aspects for the encapsulation of semiconductors and at temperatures above 210°C [9]. Furthermore, it was possible to identify the failure mechanism of CCC on Si semiconductors after extensive thermomechanical and electrical stressing, as the cement-based encapsulant reacted with Al bonding wires and the Al topside metallization (AlSiCu) [10].…”

Section: R I Introductionmentioning

confidence: 99%

“…This encapsulation material already performed 3.5 times better in power cycling testing (compared with silicone gel) after HTRB stability was proved. For the PC-encapsulated modules, failure analysis indicated that the failure mode shifted from a wire bond liftoff (failure mode of power modules encapsulated with common silicone gel) to a solder and die attach degradation [10].…”

Section: R I Introductionmentioning

confidence: 99%

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iMAPS 2019 52nd International Symposium on Microelectronics BOSTON September 30 – October 3, 2019

2019

Advancing Microelectronics Magazine

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Section: A Materialsmentioning

confidence: 99%

Section: A Encapsulation Materials Properties Microstructurementioning

confidence: 99%

Section: R I Introductionmentioning

confidence: 99%

Section: R I Introductionmentioning

confidence: 99%

Section: R I Introductionmentioning

confidence: 99%

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iMAPS 2019 52nd International Symposium on Microelectronics BOSTON September 30 – October 3, 2019

2019

Advancing Microelectronics Magazine

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Sol–gel encapsulation for power electronics utilizing 3-Glycidyloxypropyltriethoxysilane and 3-Mercaptopropyltrimethoxysilane

Kohler

Hejtmann

Henneck

et al. 2022

J Sol-Gel Sci Technol

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Abstract3-Glycidyloxypropyltriethoxysilane and 3-Mercaptosilane were used to prepare a composite together with aluminum oxide. The compound is a potential candidate for being used as inorganic encapsulation. FTIR results paired with head-space analysis revealed a hardening of the composite at above 130 °C and degradation of the sol–gel-network above 150 °C. The adhesion of these compounds was tested via shear tests. It showed, that the addition of 3-Mercaptopropyltriethoxysilane enhanced the adhesion on silver significantly. This is attributed to the covalent nature of the Ag-S bond, which is forming as compared to the solely dispersive forces, when 3-Mercaptopropyltriethxysilane is not used. By conducting the shear test under temperature activation energies for the breakages were calculated. These coincide well with the binding energy of Ag-S in case silver surfaces are examined. In the case of a copper surface, a mixture of covalent and dipole–dipole interactions are found, since the activation energy for breakage is smaller as the Cu-O bond energy.

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Investigation of inorganic encapsulated power modules with enhanced cooling possibilities

Behrendt

2022

2022 IEEE 9th Electronics System-Integration Technology Conference (ESTC)

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Material Characterization of Advanced Cement-Based Encapsulation Systems for Efficient Power Electronics with Increased Power Density

Cited by 13 publications

References 13 publications

iMAPS 2019 52nd International Symposium on Microelectronics BOSTON September 30 – October 3, 2019

iMAPS 2019 52nd International Symposium on Microelectronics BOSTON September 30 – October 3, 2019

Sol–gel encapsulation for power electronics utilizing 3-Glycidyloxypropyltriethoxysilane and 3-Mercaptopropyltrimethoxysilane

Investigation of inorganic encapsulated power modules with enhanced cooling possibilities

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