Material Characterization of Thick Film Resistor Pastes

Shah, Jay; Hahn, W. C.

doi:10.1109/tchmt.1978.1135303

Cited by 20 publications

(17 citation statements)

References 16 publications

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“…The pyrochlore-type lead ruthenate Pb 2 Ru 2 O 6+x (PRO) is used as the conducting component in thick film resisters due to the high electronic conductivity [1,2]. The polycrystalline PRO shows metallic behavior with an electronic conductivity as high as 2 -5 Â 10 3 S cm À1 at 300 K [3,4].…”

Section: Introductionmentioning

confidence: 99%

“…After PRO was first prepared by Randall and Ward [10], then subsequently by Longo et al [3], many studies of this compound with respect to the preparation and crystal structure [1,4,5,[11][12][13][14], electronic conductivity [1,2,4,[12][13][14], and band structure [15,16] have been reported. The crystal structure of cubic pyrochlore-type oxides, which have the general formula A 2 B 2 O 6 O 0 , is composed of a framework of corner shared BO 6 octahedra.…”

Section: Introductionmentioning

confidence: 99%

“…Here, the O 0 site is partially or fully occupied by an oxygen atom. The space group of PRO was originally suggested to be Fd 3m; [1,3], in which the O 0 site is randomly and partially occupied. Later investigation by a powder neutron diffraction experiment [11] has shown that the space group is F 43m; in which model vacancies in the O 0 site are ordered.…”

Section: Introductionmentioning

confidence: 99%

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Flux growth and physical properties of pyrochlore Pb2Ru2O6.5 single crystals

Akazawa

Inaguma

Katsumata

et al. 2004

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Flux growth and physical properties of pyrochlore Pb2Ru2O6.5 single crystals

Akazawa

Inaguma

Katsumata

et al. 2004

Journal of Crystal Growth

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“…Here, the X site is partially or fully occupied by an oxygen atom. The space group of pyrochlore was originally suggested to be Fd3m [54,55], in which the X site is randomly and partially occupied. Later investigation by a powder neutron diffraction experiment [56] showed that the space group is F43m; in this model vacancies in the X site are ordered.…”

Section: A 4 and B 4 -Clusters In Ordered Pyrochlore Structuresmentioning

confidence: 99%

Universal mechanism of tetrahedral metal cluster formation in structures with breathing pyrochlore sublattices

Таланов¹,

Таланов²

2017

Nanosystems: Phys. Chem. Math.

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A universal mechanism of tetrahedral metal cluster formation in crystal with geometrically frustrated pyrochlore sublattices is proposed. It has been shown that the critical irreducible representation τ , which generated the formation of metal clusters in non-centrosymmetrical F43m-phases from high symmetry phases with Fd3m space group, is a one dimensional irreducible representation κ 11 (τ 4 (A 2u )) (in Kovalev notation). The structural theory of metal cluster formation based on group theoretical calculations was published earlier for the case of A-ordered spinel. In this work, the theory is generalized in the case of any high symmetry Fd3m structures that include pyrochlore sublattices. We presented a brief review of such structures and mechanisms of the tetrahedral metal cluster formation. The existence of so called "breathing" pyrochlore sublattices in ordered phases is predicted theoretically. The groups of atoms, between which bond clusters, are found. These groups of atoms define electron correlation effects. Examples of tetrahedral metal cluster formation in ordered spinels, ordered lacunar spinels, ordered Laves phases (MgCu 4 Sn structural type) and ordered pyrochlore are considered. The theoretical results are confirmed by the known experimental facts.

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“…11,129,130 PbO in low melting frits and TF technology Thick film electronics makes wide use of glassy compounds, used as main components of overglazes, permanent binders for dielectrics and resistors, and also as frits/adhesion promoters for conductors. 21,22,24,59,[61][62][63][64][65] Note that the technology and materials are very similar for other applications such as architectural/automotive/ solar cell overglazes and conductors.For conductors, resistors and overglazes (and relatively old dielectrics), most classical low melting frits are based on the PbO-B 2 O 3 (lead borate) system, with mainly SiO 2 , ZnO and Al 2 O 3 additions. Several phase diagrams and property maps exist for these systems.…”

mentioning

confidence: 99%

Review of Bi₂O₃ based glasses for electronics and related applications

Maeder

2013

International Materials Reviews

154

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The present work critically reviews the scientific and patent literature on low melting bismuth based oxide glass frits in materials for electronics, sensors and related applications such as sealing glasses, solar cells, architectural and automotive glass, the main motivation being to replace lead based materials by environmentally more benign ones. Due to similar glass forming properties of Bi and Pb, Bi based glasses are the closest 'drop-in' alternative for lead bearing formulations, and are therefore actually replacing them in many applications, helped also by previous experience with Bi containing materials in thick film technology and component metallisations. The outstanding issues are discussed, e.g. matching the lowest processing temperatures achieved by the classical lead based glasses without sacrificing durability and stability, as well as stability versus chemical reduction. Finally, consideration is also given to special 'heavy' glasses (often containing Bi and Pb together) that are useful in fields such as optics, superconductors and nuclear technology, as well as to specific Bi 2 O 3 containing crystalline compounds.Keywords: Glasses, Bismuth, Bi 2 O 3 , Electronics, Optics, Thick film technology, Sensors Introduction Low melting glasses in electronics and other applicationsAs for ceramics, inorganic glasses, glass-ceramic and glaze materials have long gone beyond their traditional uses to address a wide array of modern technological challenges, Owing to performance and cost criteria, most standard glasses have relatively high softening points. However, there are many technological applications where a low softening temperature is required, in order to lower energy expenditure, avoid damaging devices in contact with the glass during processing or ensure compatibility with other materials:(i) hermetic sealing of packages, lamps, electrical feedthroughs and semiconductor devices 13,14,16,17,19,44,45 (ii) hermetic sealing and mechanical attachment of sensors 23,27 ( Fig. 1) (iii) encapsulation of semiconductor devices 29,30 (iv) overglazing of automotive, packaging and architectural glass 33,34,[46][47][48] (v) photovoltaic (PV) solar cell technology -conductors and contacts 42,43,[49][50][51][52][53] (vi) enamelling of aluminium in architecture and home appliances 35,[54][55][56][57][58] (vii) thick film (TF) electronics and other devices 21,22,24,25,27,59 (Fig. 1, the section on 'PbO in low melting frits and TF technology'); especially, special low firing compositions for fabrication of circuits and sensors on glass or metals. 1,28,[66][67][68][69][70][71][72] For these applications, glasses are often formulated as frits (e.g. finely divided powder), which may be applied, dispersed in a suitable medium, onto a substrate by various methods such as slip casting, screen printing, roller/curtain coating, spraying, dispensing and electrophoresis, or as preforms for sealing. Classically, the aforementioned applications have to a great extent used lead based glasses, which have a rather unique combinat...

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Material Characterization of Thick Film Resistor Pastes

Cited by 20 publications

References 16 publications

Flux growth and physical properties of pyrochlore Pb2Ru2O6.5 single crystals

Flux growth and physical properties of pyrochlore Pb2Ru2O6.5 single crystals

Universal mechanism of tetrahedral metal cluster formation in structures with breathing pyrochlore sublattices

Review of Bi₂O₃ based glasses for electronics and related applications

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Material Characterization of Thick Film Resistor Pastes

Cited by 20 publications

References 16 publications

Flux growth and physical properties of pyrochlore Pb2Ru2O6.5 single crystals

Flux growth and physical properties of pyrochlore Pb2Ru2O6.5 single crystals

Universal mechanism of tetrahedral metal cluster formation in structures with breathing pyrochlore sublattices

Review of Bi2O3 based glasses for electronics and related applications

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Review of Bi₂O₃ based glasses for electronics and related applications