Material considerations for third generation infrared photon detectors

Rogalski, Antoni

doi:10.1016/j.infrared.2006.10.015

Cited by 78 publications

(47 citation statements)

References 46 publications

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“…Initially developed to increase the gain of MWIR lasers [13], it was reported to offer an order of magnitude improvement in dark current performance [12] and R 0 A comparable to MCT. As illustrated in Figure 16, this type of design consists of InAs electron wells surrounding a GaInSb hole well and positioned between two quaternary AlGaInSb barriers [10].…”

Section: W-structurementioning

confidence: 99%

“…The 6.1 Å family material includes wide, medium, and narrow gap components, with GaSb, insulating AlSb, and high mobility InAs (see Figure 2) [12,13]. Type II InAs/GaSb SLS detectors offer broad design band structure flexibility: it is possible in these materials to tailor the IR operating wavelength from 3 μm to around 30 μm, covering most of the practical IR wavelength spectrum [14].…”

Section: Introductionmentioning

confidence: 99%

“…Also, the larger effective mass in InAs/Ga(In)Sb leads to a reduction of tunneling currents in type II SLS detectors compared with MCT detectors of the same bandgap, while high electron mobility and diffusivity is maintained [29,30]. In addition, III-V materials offer [12].…”

Section: Introductionmentioning

confidence: 99%

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Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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Section: W-structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

View full text Add to dashboard Cite

show abstract

“…In recent years, the third generation infrared detectors were researched and developed in many countries, their main features are multi-band infrared detection, high-resolution (high pixels and high frame rate), high operating temperatures, high spatial uniformity, high stability and low cost [18]. As it is difficult for the MCT to achieve large area uniformity and stability, the ABCS superlattice materials is generally considered as the preferred materials of the third-generation infrared detectors [6][7]. In principle, the bandgap of the ABCS superlattice materials can be tailored to cover the entire spectrum area of infrared detection by adjusting the thickness and composition of the ABCS materials [19].…”

Section: Infrared Detectorsmentioning

confidence: 99%

“…The unique band structure and excellent physical properties of ABCS based materials provide great freedom and flexibility for band engineering and structural design of materials and create a broad space for development of high-performance microelectronics, opto-electronic devices and integrated circuits. Applications could include active-array space-based radar, satellite communications, ultra-high-speed and ultra-low power integrated circuits, portable mobile devices, gas environmental monitoring, chemical detection, bio-medical diagnosis, drug analysis and other fields [1][2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Liu¹

2010

Engineering

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In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.

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Solution‐Processed Flexible Broadband Photodetectors with Solution‐Processed Transparent Polymeric Electrode

Zhu

Yang

Zheng

et al. 2020

Adv Funct Materials

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Room-temperature solution-processed flexible photodetectors with spectral response from 300 to 2600 nm are reported. Solution-processed polymeric thin film with transparency ranging from 300 to 7000 nm and superior electrical conductivity as the transparent electrode is reported. Solutionprocessed flexible broadband photodetectors with a "vertical" device structure incorporating a perovskite/PbSe quantum dot bilayer thin film based on the above solution-processed transparent polymeric electrode are demonstrated. The utilization of perovskite/PbSe quantum dot bilayer thin film as the photoactive layer extends spectral response to infrared region and boosts photocurrent densities in both visible and infrared regions through the trap-assisted photomultiplication effect. Operated at room temperature and under an external bias of -1 V, the solution-processed flexible photodetectors exhibit over 230 mA W -1 responsivity, over 1011 cm Hz1/2/W photodetectivity from 300 to 2600 nm and ≈70 dB linear dynamic ranges. It is also found that the solution-processed flexible broadband photodetectors exhibit fast response time and excellent flexibility. All these results demonstrate that this work develop a facile approach to realize roomtemperature operated ultrasensitive solution-processed flexible broadband photodetectors with "vertical" device structure through solution-processed transparent polymeric electrode.

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Material considerations for third generation infrared photon detectors

Cited by 78 publications

References 46 publications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Progress in Antimonide Based III-V Compound Semiconductors and Devices

Solution‐Processed Flexible Broadband Photodetectors with Solution‐Processed Transparent Polymeric Electrode

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