Material-dependent emission mechanism of secondary atomic ions from solids under MeV-energy heavy ion bombardment

Ninomiya, Satoshi; Imanishi, N.; Xue, Jianming; Gomi, S.; Imai, Makoto

doi:10.1016/s0168-583x(02)00897-2

Cited by 11 publications

(5 citation statements)

References 21 publications

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“…The cluster ions produced from the In-V targets consist of only indium atoms or those attaching a few group-V atoms. For comparison, in the case of Ga-V semiconductive materials, in spite of intense Ga + ions emitted, cluster ions composed of only antimony atoms or those attaching a few Ga atoms are substantially emitted from GaSb, but cluster ions are hardly produced from GaP and GaAs [7][8][9][10].…”

Section: Resultsmentioning

confidence: 99%

“…Intense multiply charged P q+ ions were observed in the GaP [7] and InP cases. Figures 5 and 6 show, respectively,…”

Section: Multiply Charged Secondary Atomic Ionsmentioning

confidence: 98%

“…It has been a great concern since the discovery of emission of large ionized molecules by Torgerson, Skowronski, and Macfarlane how the energy deposited to excitation of an electronic system transfers to kinetic energies enough to sputter large molecules [1]. So far, most experimental works were done for weakly bound materials such as condensed gases and biomolecules [2,3] and only a few works were done for tightly bound chemical compounds [4][5][6][7][8][9][10] except for alkali halides [11]. In contrast to nuclear-collision-induced sputtering at low incident energies, the emission mechanism of large molecules is very complex.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, the aim of the present study is to reveal in detail the material dependence of the mechanism. We have measured yields and energy distributions of secondary ions emitted from In (group-V) semiconductive compounds at incident energies between 0.5 and 5 MeV, where the electronic collision process far dominates over the nuclear one, and have compared them with those of SiO 2 (insulator), Si (semiconductor), and Ga (group-V) semiconductive compounds [4][5][6][7][8][9][10]. Systematical dependences on the electric properties of the materials have been obtained for the emission of singly and multiply charged atomic ions and cluster ions.…”

Section: Introductionmentioning

confidence: 99%

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Secondary-ion emission from III-V semiconductive materials under MeV-energy heavy-ion bombardment

et al. 2004

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Secondary-ion emission from III-V semiconductive chemical compounds (InP, InAs, and InSb) has been experimentally studied at heavy-ion energies from 0.5 to 5.0 MeV, where electronic collision is a dominant process. Various secondary ions such as large cluster ions and atomic ions were observed. Yields of In atomic and cluster ions depend scantly on the incident energy, and those of group-V atomic ions and of cluster ions containing group-V elements can be expressed by an exponential function of S e −1 , where S e is the electronic stopping power. This fact shows that the ionization probabilities of the atoms and the clusters whose ionization potentials are higher than the work functions of target materials are increased by transient electronic excitation induced by ion bombardment. The energy distributions of the atomic ions show that the singly charged atomic ions are emitted through the linear collision cascade process even at MeV incident energies, and the multiply charged ions are produced by a projectile-induced simultaneous process of ionization and recoiling of atoms on the target surface. The yield dependences of the cluster ions on the electronic stopping power and on the cluster size are so much different from those for SiO 2. This fact precludes the multiple-bond-breaking process applied to the insulating material. Structural instabilities caused by high-density electronic excitations, which are known to take place in GaAs irradiated by slow multiply charged ions or lasers, are a possible cause of the cluster-ion emission from the semiconductive compounds at the MeV energy range.

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Section: Resultsmentioning

confidence: 99%

“…Intense multiply charged P q+ ions were observed in the GaP [7] and InP cases. Figures 5 and 6 show, respectively,…”

Section: Multiply Charged Secondary Atomic Ionsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Secondary-ion emission from III-V semiconductive materials under MeV-energy heavy-ion bombardment

et al. 2004

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“…In SIMS, multiply charged ions have been observed when a surface is sputtered by noble gas ions. The yield of multiply charged ions, which is very low 9,14-16 even with incident ions at high energies, 17 does not provide information concerning the initial energetic impact. 8,9 The complicated collision cascade in SIMS makes it difficult to separate and analyze an individual collision, however.…”

Section: Introductionmentioning

confidence: 99%

Multiply charged Al recoils with impact of 2.0keV Si+ ions

Chen¹,

Šroubek²,

Yarmoff³

2007

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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The rotation of ripple pattern and the shape of the collision cascade in ion sputtered thin metal films J. Appl. Phys.Scattered Si and fast recoiled Al are both present in time-of-flight spectra collected when 2.0 keV Si + ions are incident on an Al͑100͒ surface. Monte Carlo simulations were used to determine the origin of the spectral features, and electrostatic analysis was used to measure the ion yields and charge states as a function of the recoil and incident angles. The analysis indicates that all of the scattered Si projectiles are neutralized, while the recoiled Al is produced as neutrals and in singly, doubly, and triply charged states. The formation of multiply charged ions at this low energy is attributed to inner-shell promotion during the nearly symmetric Si-Al collision. Further experiments used Cl + and SiCl + projectiles for comparison. Multiply charged recoils were not observed with Cl + , while the behavior of SiCl + could be interpreted as a linear combination of Si + and Cl + projectiles.

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Secondary ion emissions from carbon nanotubes induced by MeV Si and Si2 clusters

Ding

Shi

Wang

et al. 2004

Nuclear Instruments and Methods in Physics Research Section B:

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Material-dependent emission mechanism of secondary atomic ions from solids under MeV-energy heavy ion bombardment

Cited by 11 publications

References 21 publications

Secondary-ion emission from III-V semiconductive materials under MeV-energy heavy-ion bombardment

Secondary-ion emission from III-V semiconductive materials under MeV-energy heavy-ion bombardment

Multiply charged Al recoils with impact of 2.0keV Si+ ions

Secondary ion emissions from carbon nanotubes induced by MeV Si and Si2 clusters

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