Material manufacturing from atomic layer

Wang, Xinwei; Chen, Rong; Sun, Shuhui

doi:10.1088/2631-7990/acf3b8

Cited by 9 publications

(3 citation statements)

References 42 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SiO 2 protection layer was then removed by HF wet etching. A plasma post-oxidation was performed to form GeO x [172], which was further covered by a 5 nm Al 2 O 3 layer as the bonding interface using atomic layer deposition (ALD) [173,174]. Another Si wafer as the substrate was covered by a 2 µm-thick SiO 2 by thermal oxidation, and was deposited by a 5 nm ALD Al 2 O 3 layer.…”

Section: Fabrication Of Suspended Silicon and Germanium Waveguidesmentioning

confidence: 99%

Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing

Zhou,

Shen,

Yang

et al. 2024

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

In the past decade, there has been tremendous progress in integrating chalcogenide phase-change materials (PCMs) on the silicon photonic platform for non-volatile memory to neuromorphic in-memory computing applications. Especially, these non von Neumann computational elements and systems benefit from mass manufacturing of silicon photonic integrated circuits (PICs) on 8-inch wafers using 130-nm complementary metal-oxide semiconductor (CMOS) line. Chip manufacturing based on the deep-ultraviolet (DUV) lithography and electron-beam lithography (EBL) enable rapid prototyping of PICs, which can be integrated with high-quality PCMs based on the wafer-scale sputtering technique as a back-end-of-line (BEOL) process. In this article, we overview recent advances of waveguide integrated PCM memory cells, functional devices, and neuromorphic systems, with an emphasis on fabrication and integration processes to attain the state-of-the-art device performance. After a short overview of PCM based photonic devices, we discuss the materials properties of the functional layer as well as the progress on the light guiding layer, namely, the silicon and germanium waveguide platforms. Next, we discuss the cleanroom fabrication flow of waveguide devices integrated with thin films and nanowires, silicon waveguide and plasmonic microheaters for electrothermal switching of PCMs and mixed-mode operation. Finally, the fabrication of photonic and photonic-electronic neuromorphic computing systems is reviewed. These systems consist arrays of PCM memory elements for associative learning, matrix-vector multiplication, and pattern recognition. With large-scale integration, neuromorphic photonic computing paradigm holds the promise to outperform digital electronic accelerators by taking the advantages of ultra-high bandwidth, high speed, and energy efficient operation in running machine learning algorithms.

show abstract

Section: Fabrication Of Suspended Silicon and Germanium Waveguidesmentioning

confidence: 99%

Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing

Zhou,

Shen,

Yang

et al. 2024

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

show abstract

“…In contemporary chip fabrication, the integration of low-k dielectric materials in the interconnect layer plays a pivotal role in meeting the escalating demands of advanced chip technology [1,2]. Materials possessing lower dielectric constants are essential for enhancing signal transmission speed and minimizing power consumption [3,4].…”

Section: Introductionmentioning

confidence: 99%

Remote plasma enhanced cyclic etching of a cyclosiloxane polymer thin film

Wang,

Luo,

et al. 2024

Int. J. Extrem. Manuf.

View full text Add to dashboard Cite

The continuous evolution of chip manufacturing demands the development of materials with ultra-low dielectric constants. With advantageous dielectric and mechanical properties, initiated chemical vapor deposited (iCVD) poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) emerges as a promising candidate. However, previous works have not explored etching for this cyclosiloxane polymer thin film, which is indispensable for potential applications to the back-end-of-line fabrication. Here, we developed an etching process utilizing O2/Ar remote plasma for cyclic removal of iCVD pV3D3 thin film at sub-nanometer scale. We employed in-situ quartz crystal microbalance to investigate the process parameters including the plasma power, plasma duration and O2 flow rate. X-ray photoelectron spectroscopy and cross-sectional microscopy reveal the formation of an oxidized skin layer during the etching process. This skin layer further substantiates an etching mechanism driven by surface oxidation and sputtering. Additionally, this oxidized skin layer leads to improved elastic modulus and hardness and acts as a barrier layer for protecting the bottom cyclosiloxane polymer from further oxidation.

show abstract

“…The mechanical properties and morphology of magnetic metallic glasses make them appealing for electromagnetic shielding applications, a crucial aspect of device compatibility in several fields. A lot of attention is devoted to the employment of soft magnetic materials for electromagnetic shielding, [ 29,30 ] with works focused both on the development of novel materials [ 31 ] and on the preparation in the form of fibers: stainless steel fibers were investigated, [ 32 ] as well as glass fibers coated with FeCoNi. [ 33 ]…”

Section: Introductionmentioning

confidence: 99%

Soft Magnetic Properties and Electromagnetic Shielding Performance of Fe₄₀Ni₄₀B₂₀ Microfibers

Sharifikolouei

Żywczak²,

Sarac

et al. 2023

Adv Elect Materials

View full text Add to dashboard Cite

Fe40Ni40B20 metallic glass is a key material among the many amorphous systems investigated thus far, owing to its high strength and appealing soft magnetic properties that make it suitable for use as transformer cores. In this study, Fe40Ni40B20 microfibers are fabricated down to 5 µm diameter. Three different melt–spinning wheel velocities: ≈51 m s−1, ≈59 m s−1, and ≈63 m s−1 (MG1, MG2, MG3) are used. Their fully amorphous structure is confirmed using X–ray diffraction, and differential scanning calorimetry (DSC) traces reveal a larger relaxation profile for the higher–quenched microfiber. Vibrating sample magnetometer measurements showed a higher saturation magnetization of 136 emug−1 for annealed metallic glass microfibers with a wheel velocity of 59.66 ms−1. Cylindrical magnetic field shields are obtained by aligning and wrapping the fibers around a cast. The observed anisotropic static field shielding behavior is in accordance with the microfibers' anisotropic nature. Composite samples are also produced by embedding the microfibers in an epoxy matrix to investigate their electromagnetic properties at GHz frequencies. Inclusion of the microfibers increase the composite's attenuation constant by 20 to 25 times, making it an ideal candidate for applications in the communications frequency range.

show abstract

Material manufacturing from atomic layer

Cited by 9 publications

References 42 publications

Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing

Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing

Remote plasma enhanced cyclic etching of a cyclosiloxane polymer thin film

Soft Magnetic Properties and Electromagnetic Shielding Performance of Fe₄₀Ni₄₀B₂₀ Microfibers

Contact Info

Product

Resources

About

Material manufacturing from atomic layer

Cited by 9 publications

References 42 publications

Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing

Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing

Remote plasma enhanced cyclic etching of a cyclosiloxane polymer thin film

Soft Magnetic Properties and Electromagnetic Shielding Performance of Fe40Ni40B20 Microfibers

Contact Info

Product

Resources

About

Soft Magnetic Properties and Electromagnetic Shielding Performance of Fe₄₀Ni₄₀B₂₀ Microfibers