2011 16th International Solid-State Sensors, Actuators and Microsystems Conference 2011
DOI: 10.1109/transducers.2011.5969468
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Material optimization of phosphorus-doped polycrystalline silicon germanium for miniaturized thermoelectric generator

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Cited by 4 publications
(5 citation statements)
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“…Figure 7 illustrates that the thickness reduction of Si-based nanostructured materials leads to a decrease in thermal conductivity, resulting in a decrease of up to two orders of magnitude from the κ of crystalline Si (∼100 W/m•K) [4,7,30]. Thermal conductivity dependence on material's thickness for Si [20,[117][118][119][120][121][122][123][124] and SiGe [24,[125][126][127][128][129][130] thin films.…”
Section: Thermal Conductivity Reductionmentioning
confidence: 99%
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“…Figure 7 illustrates that the thickness reduction of Si-based nanostructured materials leads to a decrease in thermal conductivity, resulting in a decrease of up to two orders of magnitude from the κ of crystalline Si (∼100 W/m•K) [4,7,30]. Thermal conductivity dependence on material's thickness for Si [20,[117][118][119][120][121][122][123][124] and SiGe [24,[125][126][127][128][129][130] thin films.…”
Section: Thermal Conductivity Reductionmentioning
confidence: 99%
“…Z. Wang et al [127] reported the optimization of a polycrystalline silicon germanium (poly-SiGe) material by phosphorus doping for its use in thermal energy harvesting. The poly-SiGe film doping was carried out by the implantation method with phosphorus ions.…”
Section: State-of-the-art Of Si-based Thin Films Materialsmentioning
confidence: 99%
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“…The existence of the contact metal layer, such as Al, Cu, Pt, Ti or Au with low resistance value is necessary to enable high device operating performance with low power consumption and low energy losses. Furthermore, electrical conductors with high contact characteristics is important in metal layer formation of various MEMS and NEMS devices, such as MEMS microheater (Hamid et al 2015), RF MEMs devices (Hsieh et al 2001;Lee et al 2006;Rebeiz 2003), MEMS sensors Ruiz et al 2014;Wang et al 2011), and also various silicon based CMOS compatible RF-ICs (Capelle et al 2012;Chang et al 2012).…”
Section: Introductionmentioning
confidence: 99%
“…1,2) In addition, the relatively low thermal conductivity of SiGe originating from its disordered alloy lattice makes the SiGe thin film applied as a thermoelectric component in IC-compatible thermoelectric microsystems. 3) It was recently found that the SiGe/Si heating electrode has a beneficial effect on decrease of the current required to induce phase transition of chalcogenide materials, namely, transition current. 4) Since the power consumption of the GeSbTe phase change memory 5) depends strongly on the transition current for the GeSbTe film, the reduction of the transition current has been a subject of considerable interest.…”
Section: Introductionmentioning
confidence: 99%