Material parameters of antimonides and amorphous materials for modelling the mid-infrared lasers

Piskorski, Łukasz; Sarzała, Robert P.

doi:10.5277/oa160207

Cited by 5 publications

(1 citation statement)

References 38 publications

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“…Given the intrinsic difference between III-As and III-Sb semiconductors, 22,23) such as the more lateral current spreading caused by the strong asymmetry conductivity between vertical and lateral directions resulting from the much higher hole mobility (750-1000 cm 2 V −1 s −1 at 300 K) 22) of GaSb than of GaAs as a cap layer in the epitaxy structure, and the poor thermal conductivity of the III-Sb semiconductors, 23,24) the effectiveness of a BA waveguide with an etched microstripe structure in improving the carrier leakage, accumulation, and thermal behavior of GaSb-based BA lasers was demonstrated. The significantly improved threshold characteristics, output power, quantum efficiency, and single-lobed FF of GaSb-based BA lasers were demonstrated.…”

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confidence: 99%

High-power GaSb-based microstripe broad-area lasers

Wang

Shu

et al. 2018

Appl. Phys. Express

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A simple and effective approach based on the microstripe broad-area (MSBA) structure was proposed, and high-efficiency and high-power mid-infrared GaSb-based quantum well lasers were demonstrated. It was shown that the MSBA structure can effectively suppress the lateral current leakage and improve the temperature behavior of GaSb lasers. Compared with the conventional broad-area structure, the energy conversion efficiency of MSBA lasers was more than threefold and threshold current density decreased above 50%. High characteristic temperature and high beam quality were realized.

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confidence: 99%

High-power GaSb-based microstripe broad-area lasers

Wang

Shu

et al. 2018

Appl. Phys. Express

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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

Mohamed

Oxland²,

Aldegunde

et al. 2018

Solid-State Electronics

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A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm thick InAs channel on a p-type doped (1×10 16 cm-3) AlAs 0.47 Sb 0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrödinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of R sh = 90.9 Ω /sq /sq which is in a good agreement with an experimental value of 97 Ω /sq.

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