Most surface acoustic wave (SAW) radio frequency (RF) filters and duplexers have the Alelectrodes/36-48 • YX-LiTaO 3 substrate structure, which has an optimum coupling factor and an optimum reflection coefficient but does not have a good temperature coefficient of frequency (TCF). The TCF can be improved by depositing SiO 2 film with positive TCF on a transversal SAW filter consisting of a substrate with negative TCF such as LiTaO 3 and LiNbO 3 . However, resonator-type SAW devices combining SiO 2 film, Al electrodes, and LiTaO 3 substrate do not show a good frequency characteristics regardless of Al thickness. Because both (a) a SiO 2 /thin Al-electrodes/LiTaO 3 structure with small convex portions on the SiO 2 surface and (b) a flattened SiO 2 /Al-electrodes/LiTaO 3 structure have a small reflection coefficient, and (c) a SiO 2 /thick Alelectrodes/LiTaO 3 structure with large convex portions has a small coupling factor. It is considered as a countermeasure that a resonator using the reflection of a shear horizontal (SH) wave at substrate edges of their structures shows a good frequency characteristic because its reflection coefficient is very large regardless of Al thickness. It has been difficult to obtain a high-frequency edge reflection resonator because it requires too fine substrate edges for ordinary machining techniques. However, a high-frequency edge reflection resonator with a good TCF and an excellent frequency characteristic has been realized using our newly developed method of obtaining fine edges.