Material properties dependent on the thermal transport in a cylindrical nanowire

Zhang, Yong; Xie, Zili; Deng, Yuan-Xiang; Xia, Yu; Li, Kemin

doi:10.1088/1674-1056/24/12/126302

Cited by 2 publications

(1 citation statement)

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“…[14] Thermal management is an important issue for the design and application of electronic devices, which even is becoming a limiting factor currently to the device development. [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29] Owing to the atomic thickness of monolayer TMDs, thermal management is more challenging in TMDs-based electronics. On one hand, highly localized Joule heating in their ultrathin confined space can easily create "hot spots".…”

Section: Introductionmentioning

confidence: 99%

Thermal properties of transition-metal dichalcogenide

Liu

Zhang

2018

Chinese Phys. B

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Beyond graphene, the layered transition metal dichalcogenides (TMDs) have gained considerable attention due to their unique properties. Herein, we review the lattice dynamic and thermal properties of monolayer TMDs, including their phonon dispersion, relaxation time, mean free path (MFP), and thermal conductivities. In particular, the experimental and theoretical studies reveal that the TMDs have relatively low thermal conductivities due to the short phonon group velocity and MFP, which poses a significant challenge for efficient thermal management of TMDs-based devices. Importantly, recent studies have shown that this issue could be largely addressed by connecting TMDs and other materials (such as metal electrode and graphene) with chemical bonds, and a relatively high interfacial thermal conductance (ITC) could be achieved at the covalent bonded interface. The ITC of MoS 2 /Au interface with chemical edge contact is more than 10 times higher than that with physical side contact. In this article, we review recent advances in the study of TMD-related ITC. The effects of temperature, interfacial vacancy, contact orientation, and phonon modes on the edge-contacted interface are briefly discussed.

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Section: Introductionmentioning

confidence: 99%

Thermal properties of transition-metal dichalcogenide

Liu

Zhang

2018

Chinese Phys. B

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Effect of surface passivation on the electronic properties of GaAs nanowire:A first-principle study

Zhang¹,

Yi-min²,

You-Zhen³

et al. 2017

Acta Phys. Sin.

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Crystal structures of GaAs nanowires prepared by employing molecular beam epitaxy technique are often dominated by the wurtzite (WZ) phase.Recently,Galicka et al.found that the WZ GaAs nanowires grown along the[0001]direction in smaller size are energetically more favorable than other nanowires with the zinc blende phase grown along a specific direction (2008 J.Phys.:Condens.Matter 20 454226).The native nanowire usually has abundant unsaturated surface dangling bonds (SDBs) inducing significant surface states,leading to electrons accumulating at the nanowire surface. Thus the electrical property of the nanowire is very sensitive to the surface condition.However,surface passivation can effectively remove the surface states from the SDBs,and optimize the device performance.In this paper,using the first-principle calculations in combination with density function theory,we investigate the effect of surface passivation on the electronic structure of the GaAs nanowires grown along the[0001]direction.Various passivation species (hydrogen (H),fluorine (F),chlorine (Cl) and bromine (Br)) with different coverage ratios are considered.The GaAs nanowires hydrogenated with different locations and coverage ratios display different electronic properties.It is found that the GaAs native nanowire with a smaller diameter shows a semiconductor characteristic with indirect band gap,which originates from the fact that at smaller diameter,the surface stress becomes more remarkable,and then leads to surface atomic reconstruction.After passivation,the indirect band gap is translated into the direct band gap.For the GaAs nanowire with an As SDB hydrogenated,one deep donor level is located in the gap,and its band structure shows an n-type characteristic.For the GaAs nanowire with a Ga SDB hydrogenated,one shallow acceptor level is located in the gap,and its band structure shows a p-type characteristic.For the GaAs nanowire with a Ga-As dimer hydrogenated, its band structure shows an intrinsic semiconductor characteristic.For the GaAs nanowire with all of the Ga SDBs hydrogenated,the band structure shows a metallic characteristic.The band gap of the GaAs nanowire gradually increases as the hydrogen passivation ratio increases.For 50% hydrogen passivation,the band gap for the symmetrical passivation is slightly bigger than that for the half-side passivation.For the F-,Cl-and Br-passivation,the band gap decreases compared with for H-passivation.This is due to the fact that the ability of passivating atoms to compensate for surface atoms is weak,thereby reducing the band gap.The mechanism for the surface passivation is the suppression of surface states by the ability of the passivating atoms to compensate for surface atoms.These results show that the electronic properties of GaAs nanowires can be modulated by surface passivation,which is helpful for using GaAs nanowires as components and interconnections of nanoscale devices.

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Material properties dependent on the thermal transport in a cylindrical nanowire

Abstract: Material properties dependent on the thermal transport in a cylindrical nanowire *Zhang Yong(张勇) a) , Xie Zhong-Xiang(谢忠祥) a) † , Deng Yuan-Xiang(邓元祥) a) , Yu Xia(喻霞) a) ‡ , and Li Ke-Min(李科敏) b) a)

Cited by 2 publications

References 35 publications

Thermal properties of transition-metal dichalcogenide

Thermal properties of transition-metal dichalcogenide

Effect of surface passivation on the electronic properties of GaAs nanowire:A first-principle study

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Material properties dependent on the thermal transport in a cylindrical nanowire

Abstract: Material properties dependent on the thermal transport in a cylindrical nanowire *Zhang Yong(张 勇) a) , Xie Zhong-Xiang(谢忠祥) a) † , Deng Yuan-Xiang(邓元祥) a) , Yu Xia(喻 霞) a) ‡ , and Li Ke-Min(李科敏) b) a)

Cited by 2 publications

References 35 publications

Thermal properties of transition-metal dichalcogenide

Thermal properties of transition-metal dichalcogenide

Effect of surface passivation on the electronic properties of GaAs nanowire:A first-principle study

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Abstract: Material properties dependent on the thermal transport in a cylindrical nanowire *Zhang Yong(张勇) a) , Xie Zhong-Xiang(谢忠祥) a) † , Deng Yuan-Xiang(邓元祥) a) , Yu Xia(喻霞) a) ‡ , and Li Ke-Min(李科敏) b) a)