Material properties of dilute nitrides: Ga(In)NAs and Ga(In)NP

Tu, C. W.; Chen, Weimin; Buyanova, Irina; Hwang, Jenn-Shyong

doi:10.1016/j.jcrysgro.2005.12.013

Cited by 5 publications

(7 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…PL spectrum shows the exponential tail at a low energy side while at a high energy side, it shows a sharp cut-off. These characteristic, which may be caused by the distribution of bandtail states, is commonly observed in other dilute-nitride materials [7] and also in InGaPN [3]. Besides, the PL line width (FWHM) of the N-containing In 0.528 Ga 0.472 P 1-y N y layers is broader than that of In 0.528 Ga 0.472 P layer, this might due to the N incorporation.…”

Section: Resultsmentioning

confidence: 81%

See 1 more Smart Citation

MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

Kaewket

Sanorpim

Tungasmita

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Highly luminescent In0.528Ga0.472P1‐yNy layers (y =0–0.027) were grown on GaAs (001) substrates by metalorganic vapor phase epitaxy. The dependence of photoluminescence (PL) properties on the N content in In0.528Ga0.472P1‐yNy layers was investigated. Near‐band edge emissions were obviously observed up to room temperature. With increasing temperature, the PL peak energy exhibits an inverted S‐shape, which explained by the strong localization of carriers at low‐temperatures, while the band‐to‐band transition becomes dominant at higher temperatures. With incorporation of N into In0.528Ga0.472P, the bandgap at 10 K is red‐shifted as large as 110 meV for the highest N‐containing layer (y =0.027), indicating a large bandgap bowing. Further, the temperature dependence of the bandgap energy becomes significantly weak with increasing N content. Our results suggest that the density of states around the band edge of In0.528Ga0.472P1‐yNy is modified from that of In0.528Ga0.472P due to the localized states possibly induced by the presence of N. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Resultsmentioning

confidence: 81%

“…This alloy can be lattice-matched to GaAs [1] and GaP [2,4]. It is known that the incorporation of a low content of N leads to a large reduction in bandgap energy, previously reported in InGaPN [3,4]. The InGaPN alloy is expected to be "engineered semiconductor" since its bandgap energy and lattice parameter can be tuned by adjusting the In and N contents.…”

mentioning

confidence: 99%

MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

Kaewket

Sanorpim

Tungasmita

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…Its lattice constant can be lattice-matched to various substrates such as GaAs [1,2] and GaP [3,4], by adjusting the indium (In) and nitrogen (N) contents. A huge bowing parameter, which is a characteristic of the dilute III-V-nitrides, can cause a large reduction of c ○ P. SRITONWONG, S. SANORPIM, K. ONABE, 2018 the bandgap with a small amount of the N incorporation [4,5]. On the other hand, these tunable properties, both the lattice constant and bandgap, make InGaPN to be suitable in many applications such as a multi-junction solar cells [1,2], light emitting diodes (LEDs) [1,6,7], lasers, and heterojunction bipolar transistors [1,2].…”

Section: Introductionmentioning

confidence: 99%

“…For the ternary and quaternary dilute nitride semiconductors, it is known that the structural properties can be greatly improved by the rapid thermal annealing (RTA) at temperatures higher than the growth temperature [5][6][7]. In this work, to verify the structural properties of InGaPN layers grown on GaAs (001), the as-grown layer and annealed layers are investigated by high-resolution X-ray diffraction (HRXRD), Raman spectroscopy, and atomic force microscopy (AFM).…”

Section: Introductionmentioning

confidence: 99%

Structural Properties of Lattice-Matched InGaPN on GaAs (001)

Sritonwong

Sanorpim²,

Onabe

2018

Ukr. J. Phys.

View full text Add to dashboard Cite

Structural properties of lattice-matched InGaPN on GaAs (001) have comprehensively investigated by high resolution X-ray diffraction (HRXRD), Raman spectroscopy, and atomic force microscopy (AFM). The InGaPN layers were grown by metal organics vapor phase epitaxy (MOVPE). To obtain the lattice-matched InGaPN on GaAs, flow rates of trimethylindium (TMIn), trimethylgallium (TMGa) were kept, respectively, at 14.7 and 8.6 mol/min. On the other hand, the N content optimized by varying the flow rate of dimethyhydrazine (DMHy, N precursor) was controlled at 300 mol/min. With a combination of HRXRD and Raman scattering measurements, the In and N contents are estimated to be 55.8 and 0.9 at%, respectively. The lattice-mismatch lower than 0.47%, which corresponds to the lattice-matching condition, was confirmed for all the layers. The rapid thermal annealing (RTA) process was performed to improvement the crystalline quality of InGaPN layers. The annealing temperature was fixed at 650 ∘ C, which is an optimum growth temperature of a GaAs buffer layer. The annealing time was varied in a range of 30 to 180 s to verify a composition uniformity. With increasing the annealing time up to 120 s, the In and N contents were slightly increased. The AFM-root mean square (RMS) roughness of the InGaPN surface was observed to be reduced. For higher annealing times, the N content was dramatically reduced, whereas the In content was still remained. Moreover, the RMS roughness was observed to be increased. RTA at 650∘ C for 120 s demonstrated a significant improvement of structural properties of the lattice-matched InGaPN layers on GaAs (001).K e y w o r d s: InGaPN, RTA, HRXRD, MOVPE, Raman scattering.

show abstract

“…Its lattice constant can be lattice-matched to various substrates such as GaAs [1,2] and GaP [3,4], by adjusting the indium (In) and nitrogen (N) contents. A huge bowing parameter, which is a characteristic of the dilute III-V-nitrides, can cause a large reduction of the bandgap with a small amount of the N incorporation [4,5]. On the other hand, these tunable properties, both the lattice constant and bandgap, make InGaPN to be suitable in many applications such as a multi-junction solar cells [1,2], light emitting diodes (LEDs) [1,6,7], lasers, and heterojunction bipolar transistors [1,2].…”

Section: Introductionmentioning

confidence: 99%

Structure of material: an introduction to crystallography, diffraction, and symmetry

2008

Choice Reviews Online

View full text Add to dashboard Cite

Structural properties of lattice-matched InGaPN on GaAs (001) have comprehensively investigated by high resolution X-ray diffraction (HRXRD), Raman spectroscopy, and atomic force microscopy (AFM). The InGaPN layers were grown by metal organics vapor phase epitaxy (MOVPE). To obtain the lattice-matched InGaPN on GaAs, flow rates of trimethylindium (TMIn), trimethylgallium (TMGa) were kept, respectively, at 14.7 and 8.6 mol/min. On the other hand, the N content optimized by varying the flow rate of dimethyhydrazine (DMHy, N precursor) was controlled at 300 mol/min. With a combination of HRXRD and Raman scattering measurements, the In and N contents are estimated to be 55.8 and 0.9 at%, respectively. The lattice-mismatch lower than 0.47%, which corresponds to the lattice-matching condition, was confirmed for all the layers. The rapid thermal annealing (RTA) process was performed to improvement the crystalline quality of InGaPN layers. The annealing temperature was fixed at 650 ∘ C, which is an optimum growth temperature of a GaAs buffer layer. The annealing time was varied in a range of 30 to 180 s to verify a composition uniformity. With increasing the annealing time up to 120 s, the In and N contents were slightly increased. The AFM-root mean square (RMS) roughness of the InGaPN surface was observed to be reduced. For higher annealing times, the N content was dramatically reduced, whereas the In content was still remained. Moreover, the RMS roughness was observed to be increased. RTA at 650 ∘ C for 120 s demonstrated a significant improvement of structural properties of the lattice-matched InGaPN layers on GaAs (001).

show abstract

Material properties of dilute nitrides: Ga(In)NAs and Ga(In)NP

Cited by 5 publications

References 18 publications

MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

MOVPE growth of high optical quality InGaPN layers on GaAs (001) substrates

Structural Properties of Lattice-Matched InGaPN on GaAs (001)

Structure of material: an introduction to crystallography, diffraction, and symmetry

Contact Info

Product

Resources

About