2016
DOI: 10.1149/07218.0027ecst
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Material Removal Behavior of Nano-Sized Cerium Hydroxide Abrasive Slurry for Chemical Mechanical Polishing

Abstract: Microscratch induced by Chemical Mechanical Polishing (CMP) is a chronic problem to device yield-killing and its criticality becomes more important in sub-14nm device manufacturing. In order to mitigate scratching during CMP, minimizing abrasive particle size without sacrificing removal rate is the most important parameter. For this purpose, less than 5nm sized cerium hydroxide-based (nano-sized cerium hydroxide-based, NC) particle is utilized as oxide CMP slurry, which is much smaller than conventionally used… Show more

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Cited by 4 publications
(2 citation statements)
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“…Therefore, recent abrasive technology has focused on nano-sized abrasive synthesis with minimized agglomeration. For dielectric CMP, nano-sized cerium hydroxide (or ultrafine cerium hydroxide or nano-ceria) abrasive slurry has been introduced due to its potential scratch defect reduction [33][34][42][43]. The synthesis procedure of nano-sized cerium hydroxide abrasive is given in Figure 13.…”
Section: Advanced Abrasives For Future Cmp Applicationsmentioning
confidence: 99%
See 1 more Smart Citation
“…Therefore, recent abrasive technology has focused on nano-sized abrasive synthesis with minimized agglomeration. For dielectric CMP, nano-sized cerium hydroxide (or ultrafine cerium hydroxide or nano-ceria) abrasive slurry has been introduced due to its potential scratch defect reduction [33][34][42][43]. The synthesis procedure of nano-sized cerium hydroxide abrasive is given in Figure 13.…”
Section: Advanced Abrasives For Future Cmp Applicationsmentioning
confidence: 99%
“…Han et al reported polishing pad surface roughness control is critical to maintain removal rate stability with nano-sized cerium hydroxide abrasive [44]. Kim proposed particle coverage model on the wafer as material removal mechanism with nano-sized cerium hydroxide abrasive [43]. In order to apply nano-sized cerium hydroxide abrasive for dielectric CMP, role of chemistry to enhance removal rate with selectivity control needs to be further explored.…”
Section: Advanced Abrasives For Future Cmp Applicationsmentioning
confidence: 99%