molybdenum oxides recently attracted the attention, due to the peculiar features of this class of oxide, originating from the interplay between the large variety of lattice configuration and the multiple valence states of Mo. [5][6][7] Even though MoO 3 is a high-k dielectric insulator, its electronic structure can be adjusted by modifying the oxygen substoichiometry (MoO 3−x ), introducing electronic gap states that modifies the oxide's electrical conductivity. [8,9] The stoichiometric MoO 3 is an n-type material with an equilibrium concentration of defects (mainly oxygen vacancies), which cause the formation of Mo 5+ , that partially occupies Mo 4d band creating gap states. These states play as n-type dopant, push the MoO 3 Fermi level closer to the conduction band. A continuous removal of oxygen may reduce MoO 3 to MoO 2 , the lowest stable molybdenum oxide, which contains Mo 4+ cations, that give rise to a partially filled 4d band resulting in semi-metallic states.The consequent electronic properties of the vacancy formation have shown applicability across a number of technological fields, including promising electrochromic, battery cathode material, and gas sensors. [10,11] It has also been shown thatThe phase evolution and ionic redistribution in amorphous MoO 3 films, deposited on metallic aluminium (Al) and copper (Cu) substrates and subjected to distinct thermal treatments, are systematically investigated in this work. It is shown that the metallic interface significantly modifies the formation and dynamics of oxygen vacancies within the resulted structure, reducing the oxygen content of the MoO 3 up to x < 2.94. The concentration of the oxygen vacancies can also be extended to the bulk via thermal treatment up to 400 °C. It is demonstrated that the MoO 3 structure on metallic substrates is affected either by the diffusion of the metallic atoms inserted from the interface, which results in a formation of the meta-stable alloy phases in case of Cu, or by the introduction of the oxygen vacancies into the crystalline matrix in case of Al. The oxygen vacancy density in the MoO 3 films with a metallic interface can be tuned via optimal choice of the metal and treatment parameters such as temperature and oxygen partial pressure. Furthermore, the intrinsic defects present in the amorphous structure enhance the ionic mobility and diffusion of the metallic ions inside the crystalline structure.