1999
DOI: 10.1016/s0022-0248(98)00962-2
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Materials aspects of CdTe/CdS solar cells

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Cited by 211 publications
(125 citation statements)
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“…Depending on the studies carried out, various changes such as (a) re-crystallisation and grain growth, (b) interactions at CdS/CdTe interface, (c) enhancement of lifetime of charge carriers, (d) passivation of grain boundaries and (e) enhancement of device efficiencies are reported in the literature [4,52].…”
Section: Summary Of Reported Results On Cdcl 2 Treatmentmentioning
confidence: 99%
“…Depending on the studies carried out, various changes such as (a) re-crystallisation and grain growth, (b) interactions at CdS/CdTe interface, (c) enhancement of lifetime of charge carriers, (d) passivation of grain boundaries and (e) enhancement of device efficiencies are reported in the literature [4,52].…”
Section: Summary Of Reported Results On Cdcl 2 Treatmentmentioning
confidence: 99%
“…[1][2][3] The thinfilms have a grain size of only a few micrometer, so that grain boundaries limit charge collection, and hence overall efficiency, of the solar cell. Indeed in CdTe solar cells a CdCl 2 activation step, which passivates the grain boundaries, is used to improve the efficiency by nearly an order of magnitude.…”
mentioning
confidence: 99%
“…Indeed in CdTe solar cells a CdCl 2 activation step, which passivates the grain boundaries, is used to improve the efficiency by nearly an order of magnitude. 2,3 It is therefore important to understand how an individual grain boundary affects photovoltaic performance, and characterize its dependence on doping level and illumination intensity, two parameters that affect the grain boundary barrier height. 4,5 At the grain boundary region elastic strain fields, dangling bonds and any segregated atoms give rise to electronic states within the band gap which, depending on the relative capture cross-sections for electrons and holes, can act as trap or recombination sites.…”
mentioning
confidence: 99%
“…This is however not to be confused with the well-known behaviour of CdTe at low temperature (i.e. liquid nitrogen/helium cooled), where enhanced donor acceptor pair recombination is observed at the grain boundaries [10,[33][34]. P o is the power lost to backscattered electrons and nonradiative recombination at a free surface and/or grain boundary.…”
Section: Sem-cl Resultsmentioning
confidence: 95%