Materials Based on Solid Solutions of Bismuth Chalcogenides of n-Type Conductivity Prepared by Melt Crystallization in a Liquid

Feasibility of high performance in p‐type Ge1−xBixTe materials for thermoelectric modules

“…70 In this work, we present the segmented TE unicouple design for TE power generation based on highperformance TE materials for the operating temperature range of 300-800 K. The offered n-leg consists of conventional low-temperature n-Bi 2 Te 2.4 Se 0.6 doped with F I G U R E 1 2 Design of segmented unicouple for thermoelectric power generation (T c = 300 K, T h = 800 K) iodine. 8 The second stage is the high-temperature PbTe, simultaneously doped with In and I donors (n-Pb 0.999 In 0.001 Te 0.999 I 0.001 ), TE. 18 The application of the low-temperature segment is particularly important for the p-type leg due to the low figure of merit of the developed p-Ge 0.96 Bi 0.04 Te in the temperature range of 300-500 K (Figure 11A).…”

“…Thermoelectric figure of merit ZT for materials, which can be used for fabrication of segmented generator modules over 300–800 K temperature range 6–15 …”

“…Thermoelectric figure of merit ZT for materials, which can be used for fabrication of segmented generator modules over 300-800 K temperature range [6][7][8][9][10][11][12][13][14][15] difference between the cold and hot sides (ΔT = T h -T c ); and (ZT) av is the average dimensionless TE figure of merit, which is expressed as:…”

“…1 Therefore, the improvement of the TE performance in materials based on well-established A V B VI and A IV B VI semiconductors seems to be logical. Today, we have only two groups of TE materials that can be really applied in practice for energy conversion: Bi 2 Te 3 -based materials for the ambient temperature range of 300-600 K and A IV B VI (PbTe, GeTe) semiconductors for the temperature range of 500-800 K. Figure 1 represents the dimensionless TE figure of merit ZT for n-and p-type materials, which are optimal for segmented generator modules over the temperature range of 300-800 K. [6][7][8][9][10][11][12][13][14][15] While Bi 2 Te 3 -based materials remain the champion in the low-temperature region, we should mention that among the new materials, Mg 3 Sb 2 n-type material has also been showing high efficiency. 16,17 For the mid-high temperature range, an effective PbTe TE material has been developed recently by indium doping.…”

“…Therefore, the improvement of the TE performance in materials based on well‐established A V B VI and A IV B VI semiconductors seems to be logical. Today, we have only two groups of TE materials that can be really applied in practice for energy conversion: Bi 2 Te 3 ‐based materials for the ambient temperature range of 300–600 K and A IV B VI (PbTe, GeTe) semiconductors for the temperature range of 500–800 K. Figure 1 represents the dimensionless TE figure of merit ZT for n ‐ and p ‐type materials, which are optimal for segmented generator modules over the temperature range of 300–800 K 6–15 …”