Materials characterization and device analysis for evaluation of semiconductor processes by highly‐sophisticated photoelastic stress measurement technique

Herms, M.; Wagner, Matthias; Молчанов, А. М.; Lin, Pinyen; Wolf, Ingrid De; Zhao, Ming

doi:10.1002/pssc.201400356

Cited by 5 publications

(11 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…SIREX does not work depth-resolving but the probing beam integrates twice over the whole path between front and reflecting face. turning the sample holder (see [1], [6]).…”

Section: Methods 21 Sirexmentioning

confidence: 99%

“…Because of former successful experiments on laser marks as well as first time results on TSVs [6] the measurements have been performed in face-down configuration (see Fig. 03).…”

Section: Study Of Tsv 31 Experimentalmentioning

confidence: 99%

“…01: Scheme of SIREX showing the path of probing beam from the laser source to the sample, after reflection from the backside of sample to the detectors. The initial polarization angle is varied byturning the sample holder (see[1],[6]).…”

mentioning

confidence: 99%

See 2 more Smart Citations

Copper Through Silicon Vias Studied by Photo-elastic Scanning Infrared Microscopy

Herms¹,

Wagner²,

Wolf

2016

Microelectronics Reliability

View full text Add to dashboard Cite

The in-plane stress distribution in copper through silicon vias (TSV) ensembles of different design has been studied by the scanning infrared stress explorer (SIREX). SIREX is a reflection-based plane polarimeter particularly developed for the high-resolution stress state visualization in silicon-based electronic and mechanic devices. The SIREX method is based on the principle of stress-induced birefringence. We demonstrate that the silicon crystal matrix around the TSV is optically anisotropic with a stress distribution being similar to fields which are known from point-like stress sources. The maps of optical anisotropy have been converted into maps of difference of principal stress components ∆σ with a resolution of a few kPa. We show that magnitude and direction of ∆σ depend on the geometrical design of the TSVs, in particular on length and diameter. The average radial profile of magnitude is discussed. In consequence, we offer a promising tool and method for the non-destructive evaluation of TSV structures in view of their stress characteristics and integrity.

show abstract

“…SIREX does not work depth-resolving but the probing beam integrates twice over the whole path between front and reflecting face. turning the sample holder (see [1], [6]).…”

Section: Methods 21 Sirexmentioning

confidence: 99%

“…Because of former successful experiments on laser marks as well as first time results on TSVs [6] the measurements have been performed in face-down configuration (see Fig. 03).…”

Section: Study Of Tsv 31 Experimentalmentioning

confidence: 99%

See 1 more Smart Citation

Copper Through Silicon Vias Studied by Photo-elastic Scanning Infrared Microscopy

Herms¹,

Wagner²,

Wolf

2016

Microelectronics Reliability

View full text Add to dashboard Cite

show abstract

“…Furthermore, the stress on the die edge and the stress decay from the die edge moving towards the die center were measured using a Scanning Infrared Stress Explorer (SIREX). This technique is based on stress-induced changes in the polarization of IR-light [3]. It measures the difference in the in-plane normal stresses (Δσ).…”

Section: Inspection and Post Dicing Testsmentioning

confidence: 99%

Investigation of Advanced Dicing Technologies for Ultra Low-k and 3D Integration

Podpod

Inoue

Wolf

et al. 2016

2016 IEEE 66th Electronic Components and Technology Conference (ECTC)

View full text Add to dashboard Cite

The introduction and use of ultra low-k dielectric materials in an attempt to achieve better die performance brought new challenges to the wafer singulation / dicing process. Ultra low-k dielectric materials can easily get damaged during conventional blade dicing due to their brittleness. Thus, there is a need to investigate alternative or more advanced dicing techniques that can deliver successful dicing processes without inducing stress or damage. Apart from looking at the compatibility of the different dicing techniques with (ultra) low-k dielectric materials, the integration of these different dicing techniques into the different 3D-technology configurations was also investigated.This paper reports on the post dicing results and the challenges for 3D technology for the following different dicing technologies: blade dicing, laser grooving + blade dicing, laser grooving + plasma dicing, stealth dicing, plasma dicing, and laser full cut dicing.

show abstract

“…Scanning infrared depolarization (SIRD) imager is a nondestructive photo-elastic measurement system that has been developed for fast visualization and evaluation of such stress states under industrial conditions. [1] SIRD uses the phenomenon of stress-induced optical birefringence. This birefringence changes the polarization of an IR laser beam probing the wafer, which results in a map of depolarization.…”

Section: Introductionmentioning

confidence: 99%

The Photo‐Elastic Constant of Silicon Reviewed in Experiment and Simulation

Herms¹,

Irmer

Kupka³

et al. 2019

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

Results of experiments on single‐crystalline silicon wafers that allow for the determination of the degree of photo‐elastic anisotropy Ape are presented. Ape is introduced as an absolute value of (π11 − π12 − π44)/(π11 − π12 + π44), where π11, π12, and π44 are the piezo‐optical coefficients. These experiments are performed using the measurement system scanning infrared depolarization (SIRD) imager equipped with a special calibration set‐up that produces a defined diametrical loading of the wafer. The generated depolarization maps are compared with simulation results based on a classic 2D stress model, taking the crystallographic anisotropy of silicon into account, by applying the full tensor calculus. The best‐matching material constants used for simulation are compared with data being available from external publications. Ape is determined to be 0.21 ± 0.01 at a wavelength λ = 1.3 μm. Conclusions in view of current studies on other semiconductor material systems are discussed.

show abstract

Materials characterization and device analysis for evaluation of semiconductor processes by highly‐sophisticated photoelastic stress measurement technique

Cited by 5 publications

References 7 publications

Copper Through Silicon Vias Studied by Photo-elastic Scanning Infrared Microscopy

Copper Through Silicon Vias Studied by Photo-elastic Scanning Infrared Microscopy

Investigation of Advanced Dicing Technologies for Ultra Low-k and 3D Integration

The Photo‐Elastic Constant of Silicon Reviewed in Experiment and Simulation

Contact Info

Product

Resources

About