Materials chemistry for low-k materials

Hatton, Benjamin D.; Landskron, Kai; Hunks, William J.; Bennett, Mark; Shukaris, Donna; Perovic, Douglas D.; Ozin, Geoffrey A.

doi:10.1016/s1369-7021(06)71387-6

Cited by 268 publications

(179 citation statements)

References 60 publications

Supporting

Mentioning

174

Contrasting

Unclassified

Order By: Relevance

“…Dielectric properties are correlated with electro-optic property of the materials. Microelectronics industry needs low dielectric constant (e r ) materials as an interlayer dielectric (Hatton et al 2006). The dielectric constant is calculated using the formula,…”

Section: Dielectric Studiesmentioning

confidence: 99%

Dielectric Properties of Cadmium Selenide (CdSe) Nanoparticles synthesized by solvothermal method

2013

View full text Add to dashboard Cite

Synthesis of nanoparticles of cadmium selenide (CdSe) was carried out using solvothermal method with cadmium nitrate and sodium selenite as precursors. Hydrazine hydrate and ethylenediamine tetra acetic acid were used as the capping agent to control the size of the nanoparticles. As their size decreases to their Bohr radius (usually around a few nanometers), all electronic properties change, and equally important, become dependent on size. In this size, a semiconductor nanoparticle transition occurs in which the electrons and holes are confined beyond their natural Bohr radius. The properties become dependent not only on size, but also on shape. The crystalline nature and particle size of the samples were characterized by Powder X-ray diffraction analysis (XRD). The morphology of prepared CdSe nanoparticles was studied by scanning electron microscope. Dielectric studies were carried out for the pelletized sample of CdSe nanoparticles. The ac conductivity of CdSe nanoparticle has been studied. The obtained results are discussed.

show abstract

Section: Dielectric Studiesmentioning

confidence: 99%

Dielectric Properties of Cadmium Selenide (CdSe) Nanoparticles synthesized by solvothermal method

2013

View full text Add to dashboard Cite

show abstract

“…Microelectronics industry needs low dielectric constant (εr) materials as an interlayer dielectric [17] The dielectric constant is calculated using the formula res5 (a), 5(b) show the variation of dielectric constant and dielectric loss with respect to frequency for all temperatures of L-Serine doped KDP crystals. Compared to the pure KDP, dielectric constant (εr ) value is found to be low for doped KDP [18].…”

Section: Dielectric Studymentioning

confidence: 99%

Growth and Charactersation of L-Serine Doped Pottassium Dihydrogen Phosphate Crystal

Manimekalai¹,

Rajasekaran²

2017

IJERT

View full text Add to dashboard Cite

Abstract-Potassium dihydrogen phosphate is a material rich in NLO property with wide range of industrial applications. Certain Amino acids are also rich in NLO properties so they are used as dopants.In the present work LSerine a non essential amino acid is added in the ratio 1:1 molar percentage to KDP. Single crystals were grown by slow evaporation method. The grown crystals were characterized by powder X-ray diffraction, Single crystal X-Ray diffraction, UVvis-spectroscopy, Fourier transform infrared spectroscopy (FTIR), SHG efficiency and dielectric studies, The single crystal X-ray diffraction studies reveal the structure and space group of the crystal. The powder X-ray diffraction study shows that the crystalline perfection of grown crystal is good. Fourier transform infrared studies confirm the functional groups of the crystals. It is seen from UV-vis studies that the optical transparency is found to increase much by adding chlorides. SHG efficiency of KDP is found to be slightly increasing with doping of L-Serine.The electrical properties of the crystal have been studied using dielectric constant studies. All the results are compared with the results of pure KDP.

show abstract

“…For simple metal-oxide semiconductor field effect transistors (MOSFET), the low-k materials should be structurally uniform, have low dielectric constant (k * 2), low dielectric loss, high hardness, high adhesion strength, thermal stability, and low moisture absorption [7]. Because of the network structure in organically modified silica melting gels, the structural uniformity and hardness can be achieved.…”

Section: Property Requirements For Low K Materials In Integrated Circmentioning

confidence: 99%

Erratum to: Organic–inorganic hybrid melting gels

Klein

Jitianu

2011

J Sol-Gel Sci Technol

View full text Add to dashboard Cite

Melting gels are a class of organically modified silica gels that are rigid at room temperature, flow at temperature T1 and consolidate at temperature T2 (T2 [ T1), when crosslinking is complete. The process of (a) softening, (b) becoming rigid and (c) re-softening can be repeated many times. Mixtures of mono-substituted alkoxysilanes and di-substituted alkoxysilanes have been studied in a systematic way to identify suitable melting gel compositions. The mixtures and the resulting melting gels have been characterized for their softening temperatures and consolidation temperatures. With an interest in using these materials for sealing microelectronics, their physical properties have been measured.

show abstract

Materials chemistry for low-k materials

Cited by 268 publications

References 60 publications

Dielectric Properties of Cadmium Selenide (CdSe) Nanoparticles synthesized by solvothermal method

Dielectric Properties of Cadmium Selenide (CdSe) Nanoparticles synthesized by solvothermal method

Growth and Charactersation of L-Serine Doped Pottassium Dihydrogen Phosphate Crystal

Erratum to: Organic–inorganic hybrid melting gels

Contact Info

Product

Resources

About