Materials contrast in piezoresponse force microscopy

Kalinin, Sergei V.; Eliseev, Eugene A.; Morozovska, Anna N.

doi:10.1063/1.2206992

Cited by 76 publications

(64 citation statements)

References 15 publications

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“…2 Currently, piezoresponse force microscopy ͑PFM͒ is widely used for assessment of the local switching properties via visualization of domain structure, after application of an electric potential between the probing tip and the bottom electrode. [3][4][5][6] Generally, domain orientation after poling is consistent with the direction of the applied electric field. However, in some cases this trend is disrupted, i.e., after the external field is turned off the resulting domains exhibit polarization opposite to the direction of the applied field.…”

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confidence: 88%

Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors

Vilarinho

et al. 2008

Applied Physics Letters

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Observation of abnormal (against the applied electric field) domain switching in Pb(ZrxTi1−x)O3 films by piezoresponse force microscopy is reported. In some grains polarization orients opposite to the external field in the presence of the applied field, while the rest of the film volume switches in a normal way. This effect is observed in thin film capacitors which excludes charge injection effect and spontaneous backswitching due the built-in field, which is the possible reason for this behavior. The abnormal switching behavior is attributed to the charge compensation effect at the boundaries of the grains with rhombohedral structure.

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confidence: 88%

Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors

Vilarinho

et al. 2008

Applied Physics Letters

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“…This approach, while not rigorous, significantly simplifies the problem and in particular allows the effective symmetry of the elastic, dielectric, and piezoelectric properties of a material to be varied independently (Appendix A). 44 In particular, we note that the dielectric and particularly elastic properties described by positively defined second-and fourth-rank tensors (invariant with respect to 180° rotation) are necessarily more isotropic than piezoelectric properties described by third-rank tensors (antisymmetric with respect to 180° rotation).…”

Section: Iii3 Electromechanical Response To a Point Chargementioning

confidence: 99%

Electromechanical detection in scanning probe microscopy: Tip models and materials contrast

Eliseev

Kalinin

Jesse

et al. 2007

Journal of Applied Physics

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The rapid development of nanoscience and nanotechnology in the last two decades was stimulated by the emergence of scanning probe microscopy (SPM) techniques capable of accessing local material properties, including transport, mechanical, and electromechanical behavior on the nanoscale. Here, we analyze the general principles of electromechanical probing by piezoresponse force microscopy (PFM), a scanning probe technique applicable to a broad range of piezoelectric and ferroelectric materials. The physics of image formation in PFM is compared to Scanning Tunneling Microscopy and Atomic Force Microscopy in terms of the tensorial nature of excitation and the detection signals and signal dependence on the tipsurface contact area. It is shown that its insensitivity to contact area, capability for vector detection, and strong orientational dependence render this technique a distinct class of SPM.The relationship between vertical and lateral PFM signals and material properties are derived analytically for two cases: transversally-isotropic piezoelectric materials in the limit of weak elastic anisotropy, and anisotropic piezoelectric materials in the limit of weak elastic and dielectric anisotropies. The integral representations for PFM response for fully anisotropic material are also obtained. The image formation mechanism for conventional (e.g., sphere and cone) and multipole tips corresponding to emerging shielded and strip-line type probes are analyzed. Resolution limits in PFM and possible applications for orientation imaging on the nanoscale and molecular resolution imaging are discussed.

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“…The important consequence is that the presence of only two response levels corresponding to +P and -P states are characteristic features of this mechanism. For a realistic SPM configuration, the magnitude of the response was extensively analyzed and coupled, [100][101][102] numerical, 108 and approximate [109][110][111][112] solutions are well known. For intrinsic switching, the response time is below nanoseconds, i.e.…”

Section: Ferroelectric Switchingmentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

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206

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Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

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Materials contrast in piezoresponse force microscopy

Cited by 76 publications

References 15 publications

Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors

Abnormal domain switching in Pb(Zr,Ti)O3 thin film capacitors

Electromechanical detection in scanning probe microscopy: Tip models and materials contrast

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

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