Mathematical modeling and numerical simulation of domain wall motion in magnetic nanostrips with crystallographic defects

Consolo, G.; Currò, Carmela; Martínez, Eduardo; Valenti, Giovanna

doi:10.1016/j.apm.2011.12.024

Cited by 28 publications

(31 citation statements)

References 30 publications

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“…These uniformly magnetized states, far away from the wall location, are hence supposed to be directed towards the easy axis c z = e, namely, the energetically preferred direction of spontaneous magnetization. Current-driven DW dynamics in such a thin layer is described by the ELLG equation [20][21][22][23][24]:…”

Section: The Analytical One-dimensional Model: Results and Discussionmentioning

confidence: 99%

“…Among the different geometries used for spintronic devices, a more recent attention is directed to magnetic nanowires and strips [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. Such thin ferromagnetic structures turn out to be relevant for the realization of oscillators and high-density memories with low energy consumption [9].…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…From the theoretical viewpoint, DW motion in ferromagnetic thin layers is ruled by the extended Landau-Lifshitz-Gilbert (ELLG) equation including the currentdriven spin-torque effects [20][21][22][23][24]. Travelling wave solutions for the ELLG equation have been recently obtained, providing a strong theoretical support for both experimental and numerical results [20,22]. It has been also demonstrated that the inclusion of a different dissipation function into the ELLG equation, usually referred to as "dry-friction," gives a good description of DW dynamics in the presence of crystallographic defects and structural disorder [20,22].…”

Section: Introductionmentioning

confidence: 99%

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On the Travelling Wave Solution for the Current-Driven Steady Domain Wall Motion in Magnetic Nanostrips under the Influence of Rashba Field

Puliafito

Consolo

2012

Advances in Condensed Matter Physics

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Spin-orbit Rashba effect applies a torque on the magnetization of a ferromagnetic nanostrip in the case of structural inversion asymmetry, also affecting the steady domain wall motion induced by a spin-polarized current. This influence is here analytically studied in the framework of the extended Landau-Lifshitz-Gilbert equation, including the Rashba effect as an additive term of the effective field. Results of previous micromagnetic simulations and experiments have shown that this field yields an increased value of the Walker breakdown current together with an enlargement of the domain wall width. In order to analytically describe these results, the standard travelling wave ansatz for the steady domain wall motion is here adopted. Results of our investigations reveal the impossibility to reproduce, at the same time, the previous features and suggest the need of a more sophisticated model whose development requires, in turn, additional information to be extracted from ad hoc micromagnetic simulations.

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Section: The Analytical One-dimensional Model: Results and Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On the Travelling Wave Solution for the Current-Driven Steady Domain Wall Motion in Magnetic Nanostrips under the Influence of Rashba Field

Puliafito

Consolo

2012

Advances in Condensed Matter Physics

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“…This model allowed studying the influence of magnetic friction on the linewidth of ferromagnetic resonance (FMR) [18]. More recently the model has been implemented 6 in micromagnetic simulations to study the field and current driven domain wall motion in nanostrips with defects [19][20][21]. In the usual LLG (eq.2), the magnetization stops moving when the magnetization vector gets aligned with the effective field since in this case, there is no more torque acting on the magnetization | ( × µ 0 )| = 0.…”

Section: A Modelmentioning

confidence: 99%

Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction

et al. 2019

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We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel and the antiparallel magnetic configurations. We experimentally show that this can be achieved by exploiting antiferromagnet-ferromagnet exchange interactions in a regime where the antiferromagnet is thin enough to induce enhanced coercivity and no exchange bias. The frustration of exchange interactions at the interfaces due to competing ferro-and antiferromagnetic interactions is at the origin of an isotropic dissipation mechanism yielding isotropic coercivity. From a modeling point of view, it is shown that this isotropic dissipation can be described by a dry friction term in the Landau-Lifshitz-Gilbert equation. The influence of this dry friction term on the magnetization dynamics of an in-plane magnetized layer submitted to a rotating in-plane field is investigated both analytically and numerically. The possibility to control the free layer magnetization orientation in an in-plane magnetized magnetic tunnel junction by using the spin transfer torque from an additional perpendicular polarizer is also investigated through macrospin simulation. It is shown that the memristor function can be achieved by the injection of current pulses through the stack in the presence of an in-plane static field transverse to the reference layer magnetization, the aim of which is to limit the magnetization rotation between 0° and 180°.

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Strain‐controlled dynamics of transverse domain walls in hybrid piezoelectric–magnetostrictive heterostructures: An asymptotic approach

Halder,

Maity,

Dwivedi

2024

Z Angew Math Mech

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The present work deals with an analytical study of the statical and dynamical behavior of transverse magnetic domain walls in hybrid bilayer piezoelectric/magnetostrictive heterostructures under the combined influence of spin‐polarized electric currents, transverse, and axial applied magnetic fields. The magnetostrictive material is considered to be isotropic and linearly elastic. We perform the investigation within the framework of the one‐dimensional Landau–Lifshitz–Gilbert equation. By employing the regular perturbation asymptotic expansion approach, we derive the explicit analytical expression of the most significant dynamic features, namely, traveling wave profile, DW velocity, and displacement under the influence of small and moderate transverse magnetic fields. Finally, we illustrate numerically the analytical results and delineate the domain wall motion for metallic and semiconductor ferromagnets.

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Mathematical modeling and numerical simulation of domain wall motion in magnetic nanostrips with crystallographic defects

Cited by 28 publications

References 30 publications

On the Travelling Wave Solution for the Current-Driven Steady Domain Wall Motion in Magnetic Nanostrips under the Influence of Rashba Field

On the Travelling Wave Solution for the Current-Driven Steady Domain Wall Motion in Magnetic Nanostrips under the Influence of Rashba Field

Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction

Strain‐controlled dynamics of transverse domain walls in hybrid piezoelectric–magnetostrictive heterostructures: An asymptotic approach

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