Matrix-Dependent Strain Distributions of Au and Ag Nanoparticles in a Metal-Oxide-Semiconductor-Based Nonvolatile Memory Device

Abstract

The matrix-dependent strain distributions of Au and Ag nanoparticles in a metal-oxide-semiconductor based nonvolatile memory device are investigated by finite element calculations. The simulation results clearly indicate that both Au and Ag nanoparticles incur compressive strain by high-k Al 2 O 3 and conventional SiO 2 dielectrics. The strain distribution of nanoparticles is closely related to the surrounding matrix. Nanoparticles embedded in different matrices experience different compressive stresses, which provide opportunities for tailoring the microstructure of Au and Ag nanoparticles. This opens up ways for exploring strain effects on physical properties and further tunes the charge storage properties of nanoparticles.

Recent advances in metal nanoparticle‐based floating gate memory

“…also investigate the matrix‐dependent strain distribution of different metal NPs embedded in dielectric layers with various thickness, which is sandwiched between Al 2 O 3 and SiO 2 as blocking and tunneling oxide layer, respectively. [ 77 ] Since strong compressive strain existed in the NPs, strain‐relaxing defects serving as charge storage centers would be created at the surface of Au or Ag NPs, leading to capture more charges and enhance charge storage properties. This research showed that compare to Au or Ag NPs in the SiO 2 matrix, metal nanoparticles in the Al 2 O 3 matrix store more charges, especially for gold.…”