Matrix effect on the photoluminescence of Si nanocrystal

Zhu, Jiang; Hao, Hong-Chen; Ding, Linghong; Lu, Ming

doi:10.1007/s11051-012-1097-9

Cited by 7 publications

(2 citation statements)

References 32 publications

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“…It has been established that the light emission from Si-NCs is basically related to their interfacial states [5,8,20,[29][30][31][32][33][34]. Figure 4(a) shows the FTIR absorption spectra for the samples in figure 2.…”

Section: Resultsmentioning

confidence: 99%

“…Si light source is of key importance for integrated Si optoelectronics [1][2][3][4][5][6][7][8][9][10][11][12][13]. As a promising material for Si light sources, Si nanocrystals, or Si-NCs, have received a lot of interest concerning enhancements of their light emissions and optical gains [14][15][16][17][18][19][20][21][22][23]. Meanwhile, tuning the wavelength of light emission has also attracted considerable attention for the flexibility of application such as multi-wavelength optical communication [24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

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White light emission and optical gains from a Si nanocrystal thin film

et al. 2015

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We report a Si nanocrystal thin film consisting of free-standing Si nanocrystals, which can emit white light and show positive optical gains for its red, green and blue (RGB) components under ultraviolet excitation. Si nanocrystals with ϕ = 2.31 ± 0.35 nm were prepared by chemical etching of Si powder, followed by filtering. After being mixed with SiO2 sol-gel and thermally annealed, a broadband photoluminescence (PL) from the thin film was observed. The RGB ratio of the PL can be tuned by changing the annealing temperature or atmosphere, which is 1.00/3.26/4.59 for the pure white light emission. The origins of the PL components could be due to differences in oxygen-passivation degree for Si nanocrystals. The results may find applications in white-light Si lasing and Si lighting.

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