Matrix method for determining propagation characteristics of optical waveguides

Sharma, Enakshi K.; Ghatak, Ajoy; Goyal, I.C.

doi:10.1109/jqe.1983.1072026

Cited by 14 publications

(1 citation statement)

References 8 publications

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“…Since we use a Si substrate, the approach to obtain resonances was to use a SiO 2 layer obtained by direct oxidation of the substrate as the first step. Using the matrix propagation method 24 the thickness of a-SiO x <Er> and of Si0 2 were calculated. On these simulations we consider that: a) the desired resonances must occur in the a-SiO x <Er> layer; b) there are 3 wavelenghts involved in the process (external pump near 500nm, Si-NC emission near 800 nm, and a-SiO x <Er> emission near 1550 nm); c) as the a-SiO x <Er> layer is deposited by reactive RF co-sputtering we consider an error of 15% in the uniformity of the film thickness in this simulation.…”

Section: Experiments and Resultsmentioning

confidence: 99%

Resonant structures based on amorphous silicon suboxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550nm

Figueira

Mustafa

Tessler

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Efficient energy transfer from Si-nanoclusters to Er ions in silica induced by substrate heating during deposition J. Appl. Phys. 108, 064302 (2010); 10.1063/1.3481375 Energy transfer and 1.54 μ m emission in amorphous silicon nitride films Appl. Phys. Lett. 95, 031107 (2009); 10.1063/1.3184790 Formation and oxidation of Si nanoclusters in Er-doped Si-rich Si O x J. Appl. Phys. 97, 096108 (2005); 10.1063/1.1894600The 1.54 -μ m photoluminescence from an (Er, Ge) co-doped Si O 2 film deposited on Si by rf magnetron sputtering Appl.The authors present a resonant approach to enhance 1550 nm emission efficiency of amorphous silicon suboxide doped with Er 3+ ͑a-SiO x ͗Er͒͘ layers with silicon nanoclusters ͑Si-NC͒. Our results show an important result toward enabling the use of silicon-based material for active photonic component fabrication. Two distinct techniques were combined to fabricate a structure that allowed increasing approximately 12 times the 1550 nm emission. First, layers of SiO 2 were obtained by conventional wet oxidation and a-SiO x ͗Er͘ matrix was deposited by reactive rf cosputtering. Second, an extra pump channel ͑ 4 I 15/2 to 4 I 9/2 ͒ of Er 3+ was created due to Si-NC formation on the same a-SiO x ͗Er͘ matrix via a hard annealing at 1150°C. The SiO 2 and the a-SiO x ͗Er͘ thicknesses were designed to support resonances near the pumping wavelength ͑ϳ500 nm͒, near the Si-NC emission ͑ϳ800 nm͒ and near the a-SiO x ͗Er͘ emission ͑ϳ1550 nm͒ enhancing the optical pumping process.

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Section: Experiments and Resultsmentioning

confidence: 99%