Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

Šilėnas, A.; Požela, Yu.; Požela, K.; Jucienė, V.; Васильевский, И. С.; Галиев, Г. Б.; Пушкарев, С. С.; Климов, Е. А.

doi:10.1134/s1063782613030263

Cited by 9 publications

(2 citation statements)

References 12 publications

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“…Also, through in-situ epitaxial growth, a high quality interface between InGaAs and InAlAs can be obtained. 15,16 However, the interface between the barrier layer and high-k oxide still plays an active role in device operation, having an impact on sub threshold swing 9 and the threshold voltage. 17 As such it is still necessary to characterize and investigate the surface and interface reactions that take place during surface preparations and after subsequent oxide depositions on this surface.…”

Section: Introductionmentioning

confidence: 99%

Chemical and electrical characterization of the HfO2/InAlAs interface

Brennan

Galatage

Thomas

et al. 2013

Journal of Applied Physics

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InAlAs has the potential to be used as a barrier layer in buried channel quantum well field effect transistor devices due to favorable lattice-matching and carrier confinement properties with InGaAs. Field effect device structures of this nature may also require a high-k oxide deposited on the InAlAs surface to reduce leakage current. This study investigates the impact of surface preparations and atomic layer deposition of HfO2 on these surfaces using x-ray photoelectron spectroscopy to analyse the chemical interactions taking place, as well as the electrical performance of associated capacitor devices. A large concentration of As related surface features is observed at the InAlAs surface, and is attributed to a large D-it response in electrical measurements. (C) 2013 AIP Publishing LLC

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Section: Introductionmentioning

confidence: 99%

Chemical and electrical characterization of the HfO2/InAlAs interface

Brennan

Galatage

Thomas

et al. 2013

Journal of Applied Physics

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“…In recent years, the possibility of modifying the transport characteristics of the electron gas in het erostructures using different functional layer inserts in composite QWs (CQWs) has been widely investigated. In particular, the insertion of nanoscale InAs layers into the InAlAs/InGaAs/InAlAs QW allows the mobility and maximum drift velocity of electrons to be increased [3,4], and also effective mass of electrons to be reduced [5,6]. Another way of improving the char acteristics of electron transport lies in the reduction of electron-phonon scattering in a QW due to phonon spectrum variation with the use of GaAs, AlAs, and InAs layers [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well

et al. 2015

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The photoluminescence spectra of modulation doped InAlAs/InGaAs/InAlAs heterostructures with quantum wells containing thin strained InAs and GaAs inserts are investigated. It is established that the insertion of pair InAs layers and/ or a GaAs transition barriers with a thickness of 1 nm into a quantum well leads to a change in the form and energy position of the photoluminescence spectra as compared with a uni form In 0.53 Ga 0.47 As quantum well. Simulation of the band structure shows that this change is caused by a vari ation in the energy and wave functions of holes. It is demonstrated that the use of InAs inserts leads to the localization of heavy holes near the InAs layers and reduces the energy of optical transitions, while the use of GaAs transition barriers can lead to inversion of the positions of the light and heavy hole subbands in the quantum well. A technique for separately controlling the light and heavy hole states by varying the thickness and position of the GaAs and InAs inserts in the quantum well is suggested.

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Influence of narrow inner barriers on the low-temperature lateral conduction in quantum wells

Vainberg

Pylypchuk

Baidus

et al. 2014

Low Temperature Physics

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The electron energy spectrum of a wide quantum well with a different number of narrow barriers inside the well region was calculated. It was shown that the size-quantization levels rise in energy upon the introduction of such barriers. When the maximum filling of the quantum well with narrow barriers was reached and the fragment of a short-period superlattice was formed, the envelopes of the electron wave functions on the size-quantization levels were similar in shape to those in a usual quantum well. In this case, the scattering by the surface roughness of the heterojunctions was significantly increased. The low-temperature lateral conduction in a quantum well tunnel-coupled with a 10-well short-period superlattice and, separately, in the superlattice alone was investigated experimentally. The obtained results agreed sufficiently well with the model calculations and demonstrated a new way to form parallel conducting channels with different electron mobility.

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Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts

Cited by 9 publications

References 12 publications

Chemical and electrical characterization of the HfO2/InAlAs interface

Chemical and electrical characterization of the HfO2/InAlAs interface

Photoluminescence properties of modulation-doped In x Al1–x As/In y Ga1–y As/In x Al1–x As structures with strained inas and gaas nanoinserts in the quantum well

Influence of narrow inner barriers on the low-temperature lateral conduction in quantum wells

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