MBE grown BeTe and ZnBeTe films as a new p-contact layer of ZnSe-based II–VI lasers

Cho, M.W; Hong, Soon–Ku; Chang, Jae-Soo; Saeki, Shu; Nakajima, Mayu; Yao, Takafumi

doi:10.1016/s0022-0248(00)00136-6

Cited by 15 publications

(7 citation statements)

References 7 publications

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“…Understanding the basic properties of wide band-gap Be-Zn chalcogenides, their alloys and superlattices ͑SLs͒, are currently of great academic and technological interest [1][2][3][4][5] from the designing of novel materials to the fabrication of nanoelectronic and photonic devices. In recent years bluegreen laser diodes ͑LDs͒, optical modulators, photodetectors, wave guides, and sensors operating in the visible to ultraviolet spectral range were developed 6-10 from II-VI-based alloys and compositionally modulated heterostructures.…”

Section: Introductionmentioning

confidence: 99%

Optical and vibrational properties of Be-Zn chalcogenide alloys and superlattices

Talwar

2010

Phys. Rev. B

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The results of a comprehensive theoretical study for the optical and vibrational behavior of Be-Zn chalcogenide alloys and superlattices ͑SLs͒ are presented using a realistic lattice dynamical approach. Ramanscattering data for the zone-center optical modes and the results from first-principles calculations for the elastic, lattice constants, and critical-point phonons are employed in constructing an optimized secondneighbor rigid-ion model for BeS, BeSe, and BeTe. A simple explanation is provided for the unusual characteristics of the optical phonon dispersions found in Be chalcogenides, alloys and ͑BeSe͒ m / ͑ZnSe͒ n SLs compared to those of many other Zn-based II-VI compound semiconductors. An elastic continuum model has offered a strong corroboration to the observed doublets by Raman spectroscopy in the BeTe/ZnSe superlattices near 25-30 cm −1 as the folded LA modes due to mini-zone folding in the z͑xx͒z scattering geometry. By using a standard methodology of multilayer optics with appropriate alloy dielectric functions, we have analyzed the IR reflectance spectra of BeZnSe/GaAs thin epilayers at an oblique incidence with a three-oscillator model. Comparison of our results with the reflectivity data has provided a strong validation to the fact that in the ϳ400-575 cm −1 frequency region there exist at least two types of Be-Se bonds with optical modes involving two kinds of local atomic arrangements.

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Section: Introductionmentioning

confidence: 99%

Optical and vibrational properties of Be-Zn chalcogenide alloys and superlattices

Talwar

2010

Phys. Rev. B

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“…(Zn,Be)(Te,Se) has been successfully applied in design of quantum wells [7]. ZnBeTe ternary alloy has been applied as a p-contact layer in II-VI lasers [8] and as a component of LEDs using an InP substrate [9]. High hole concentration (4.8 Â 10 18 cm --3 ) has been achieved in Zn 0.6 Be 0.4 Te layer (on InP substrate) exhibiting 2.97 eV band-gap energy [6].…”

mentioning

confidence: 99%

Structural, Optical and Thermal Properties of Bulk Zn1?xBexTe Crystals

Paszkowicz

Firszt

Gowski

et al. 2002

phys. stat. sol. (b)

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Bulk Zn 1-x Be x Te crystals were grown in the range extending up to x ¼ 0.12. Their structural, optical and photothermal properties were characterised using X-ray diffraction, photoluminescence (PL) and photoacoustic (PA) methods. The lattice constants are found to follow a linear dependence on x. Energy gap and thermal diffusivity were determined from photoacoustic spectra. The energy-gap increasing trend with rising beryllium content is in agreement with that reported for thin (Zn,Be)Te layers on InP substrate.Introduction Early theoretical studies [1,2] have shown that beryllium could be an attractive cationic substitution for ZnTe. A partial substitution of a cation (such as Zn or Cd) by Be improves the II-VI-based device properties because of highly covalent bonding and high cohesive energy in beryllium chalcogenides [3][4][5]. Therefore, it allows for the extension of structural and band-gap engineering of II-VI semiconductors towards lower lattice parameters and higher energy gaps. Beryllium is now applied as a component of II-VI heterostructures for blue light-emitting diodes, lasers and photodetectors. There is a number of papers on the properties of bulk and layered (Zn,Be)Se solid solution but relatively little information on tellurium based II-VI compounds with partial cationic substitution by Be atoms is available. Recent results show that Zn 1--x Be x Te is a promising material for p-type cladding layer of ZnCdSe/MgZnCdSe lasers on InP substrate [6]. (Zn,Be)(Te,Se) has been successfully applied in design of quantum wells [7]. ZnBeTe ternary alloy has been applied as a p-contact layer in II-VI lasers [8] and as a component of LEDs using an InP substrate [9]. High hole concentration (4.8 Â 10 18 cm --3 ) has been achieved in Zn 0.6 Be 0.4 Te layer (on InP substrate) exhibiting 2.97 eV band-gap energy [6]. As for the design of heterostructures the knowledge of bulk crystal properties is of fundamental importance, bulk ZnBeTe crystals have been grown and their properties are under investigation. Preliminary studies of luminescence and photoacoustic spectra of bulk Zn 1--x Be x Te crystals have been performed in [10] and [11], respectively. In this work, basic crystallographic, optical and thermal properties of bulk Zn 1--x Be x Te crystals grown by high pressure Bridgman method are reported.

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“…The beryllium compounds are potentially good materials for technological applications [8,9]. However, they are difficult to handle experimentally presumably because of their toxic nature.…”

Section: Introductionmentioning

confidence: 99%

“…Zn 1−x Be x Te alloy is a promising material as another choice for p-contact layer since it can be lattice matched to a number of commercially available substrates as GaAs, InP and ZnSe by adjusting the alloy composition. In particular, Zn 1−x Be x Te alloys with x = 0.08 and 0.05 are lattice matched with ZnSe and GaAs respectively [9]. The ZnBeTe alloy has the advantage to contain only one group VI element II-II-VI.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, the composition control is easier in comparison with II-VI-VI ternaries. Cho et al [9] found that the ZnBeTe films have good composition controllability and can be highly p-type doped (p > 10 19 cm −3 ) using active nitrogen plasma. Interface properties between the ZnBeTe/GaAs will be much better than either ZnSe/GaAs or ZnSSe/GaAs because the tellurium has lower reactivity with GaAs surface than sulfur or selenium [12].…”

Section: Introductionmentioning

confidence: 99%

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Optoelectronic properties of zinc blende ZnSSe and ZnBeTe alloys

et al. 2005

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The compositional dependence of the electronic band structure has been computed for zinc blende ZnSxSe1−x and Zn1−xBexTe alloys with composition x ranging from 0 to 1. The empirical pseudo potential method with the virtual crystal approximation have been used. A particlar attention has been paid to the effect of alloy disorder on the electronic properties of the II-VI studied compounds. For this purpose, the compositional disorder is added to the virtual crystal approximation as an effective potential. Such correction approximates significantly our calculated values of the band gap bowing parameters to experimental ones. The ZnSxSe1−x gap energy shows a nonlinear behavior with strong bowing for low compositions of sulfur. The Zn1−xBexTe compound, as it is known, can be direct or indirect semiconductor depending on its beryllium composition x. The electron effective mass and the refractive index have been investigated as well. Polynomial approximations are obtained for both the energy gap and the effective mass as functions of alloy composition at Γ and X valleys.

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MBE grown BeTe and ZnBeTe films as a new p-contact layer of ZnSe-based II–VI lasers

Cited by 15 publications

References 7 publications

Optical and vibrational properties of Be-Zn chalcogenide alloys and superlattices

Optical and vibrational properties of Be-Zn chalcogenide alloys and superlattices

Structural, Optical and Thermal Properties of Bulk Zn1?xBexTe Crystals

Optoelectronic properties of zinc blende ZnSSe and ZnBeTe alloys

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