MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Dvoretsky, S. A.; Михайлов, Н. Н.; Remesnik, V. G.; Sidorov, Yu. G.; Швец, В. А.; Ikusov, D. G.; Варавин, В. С.; Yakushev, M. V.; Gumenjuk-Sichevska, J.V.; Голенков, А. Г.; Lysiuk, I.O.; Tsybrii, Z.; Shevchik-Shekera, A.V.; Сизов, Ф. Ф.; Латышев, А. В.; Aseev, A. L.

doi:10.1016/j.opelre.2019.07.002

Cited by 23 publications

(16 citation statements)

References 37 publications

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“…Over time, the materials used for each of these detectors improved their performance. Today, the selenium Clark and Smith used in their first photoconductor has been replaced with lead salts [37], mercury-cadmium-telluride (MCT) [38] and indium antimonide (InSb) [39]. Bolometers have improved from the iron rods initially used by Langley to materials with strong insulator-semiconductor transitions such as vanadium dioxide [40].…”

Section: Materials Developmentmentioning

confidence: 99%

Solution-processable infrared photodetectors: Materials, device physics, and applications

Paramasivam

Vella

et al. 2021

Materials Science and Engineering: R: Reports

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This review is written to introduce infrared photon detectors based on solution-processable semiconductors. A new generation of solution-processable photon detectors have been reported in the past few decades based on colloidal quantum dots, two-dimensional materials, organics semiconductors, and perovskites. These materials offer sensitivity within the infrared spectral regions and the advantages of ease of fabrication at low temperature, tunable materials properties, mechanical flexibility, scalability to large areas, and compatibility with monolithic integration, rendering them as promising alternatives for infrared sensing when compared to vacuum-processed counterparts that require rigorous lattice matching during integration. This work focuses on infrared detection using disordered semiconductors so as to articulate how the inherent device physics and behaviors are different from conventional crystalline semiconductors. The performance of each material family is summarized in tables, and device designs unique to solution-processed materials, including narrowband photodetectors and pixel-less up-conversion imagers, are highlighted in application prototypes distinct from conventional infrared cameras. We share our perspectives in examining open challenges for the development of solution-processable infrared detectors and comment on recent research directions in our community to leverage the advantages of solutionprocessable materials and advance their implementation in next-generation infrared sensing and imaging applications.among many other areas. Commercially available IR detectors are predominantly based on vacuum-processed inorganic compound semiconductors, which are structurally rigid, brittle, and require fabrication via complex epitaxial growth and costly processes. A new generation of solution-processable semiconductors have been reported in the past few decades including colloidal quantum dots (CQDs) [1,8,9], organic semiconductors (OSCs) [4,7,10,11], perovskites [1,12,13], and two-dimensional (2D) materials [5,14]. These materials offer sensitivity within the IR spectral regions and the advantages of ease of fabrication

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Section: Materials Developmentmentioning

confidence: 99%

Solution-processable infrared photodetectors: Materials, device physics, and applications

Paramasivam

Vella

et al. 2021

Materials Science and Engineering: R: Reports

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“…Гетероэпитаксиальные структуры (ГЭС) твердого раствора теллурида кадмия и ртути (КРТ, Hg 1−x Cd x Te), выращиваемые методом молекулярно-лучевой эпитаксии (МЛЭ), занимают лидирующее место в качестве базового фоточувствительного материала для детекторов инфракрасного (ИК) излучения с высокой чувствительностью в широком спектральном диапазоне длин волн [1,2]. Перспективным направлением рассматривается применение ГЭС КРТ для лазеров ИК и терагерцовой области (ТГц), а также детекторов ТГц спектральных диапазонов длин волн [3][4][5]. Фотоэлектрические характеристики приборов на основе ГЭС КРТ МЛЭ в значительной степени определяются кристаллическим совершенством структуры.…”

Section: Introductionunclassified

Исследование кристаллического состояния слоев молекулярно-лучевой эпитаксии гетероструктур (013)HgCdTe/CdTe/ZnTe/GaAs методом генерации второй гармоники

Дворецкий¹,

Ступак²,

Михайлов³

et al. 2022

Физика И Техника Полупроводников

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The crystal perfection of HgCdTe layers of heterostructures grown on (013)GaAs substrates with ZnTe and CdTe buffer layers and orientation rotation in the plane(angle φ) and perpendicular to the growth direction (angle θ) were studied by the method of second harmonic generation. A change in the angle φ for CdTe layers was observed depending on the orientationof the GaAs substrate and its non-monotonic change throughout thickness in the MCT layer of constant composition and graded widegap layers at its boundaries. An increase in the angle θ was observed when growing the upper graded widegap MCT layer. The absolute value of the angle θ can be used for a qualitative assessment of the crystalline perfection of the HgCdTe layers

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“…The heteroepitaxial structures (HES) of the solid solution of the mercury cadmium telluride (MCT, Hg 1−x Cd x Te) being grown by the molecular beam epitaxy (MBE) take a leading position as a basic photosensitive material for IR detectors with high sensitivity within a wide spectra wavelengths range [1,2]. A promising field is regarded to be application of MCT HES'es for the IR and terahertz (THz) laser as well as the THz detectors of the spectrum ranges of the wavelengths [3][4][5]. The photovoltaic characteristics of the devices based on MBE MCT HES'es are to a large extent determined by the crystal perfection of the structure.…”

Section: Introductionmentioning

confidence: 99%

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

et al. 2022

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The crystal perfection of HgCdTe layers of heterostructures grown on (013)GaAs substrates with ZnTe and CdTe buffer layers and orientation rotation in the plane(angle φ) and perpendicular to the growth direction (angle theta) were studied by the method of second harmonic generation. A change in the angle φ for CdTe layers was observed depending on the GaAs substrate orientation and its non-monotonic change throughout thickness in the MCT layer of constant composition and graded widegap layers at its boundaries. An increase in the angle theta was observed when growing the upper graded widegap MCT layer. The absolute value of the angle theta can be used for a qualitative assessment of the crystalline perfection of the HgCdTe layers. Keywords: crystals of the sphalerite class, second harmonic, azimuthal angular dependencies, crystal perfection, CdxHg1-xTe heterostructures.

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MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Cited by 23 publications

References 37 publications

Solution-processable infrared photodetectors: Materials, device physics, and applications

Solution-processable infrared photodetectors: Materials, device physics, and applications

Исследование кристаллического состояния слоев молекулярно-лучевой эпитаксии гетероструктур (013)HgCdTe/CdTe/ZnTe/GaAs методом генерации второй гармоники

Study of the Crystalline State of MBE (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructure Layers by the Second Harmonic Generation Method

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