MBE growth and characterization of InAs/GaAs for infrared detectors

Abstract

We discuss several problems of optimisation of the MBE growth of thick (3.5 ÷ 9 µm) InAs epilayers on m) InAs epilayers on GaAs(100) substrates. Three types of layers were grown: undoped, Si-doped, and Be-doped. The whole growth process has been divided into two parts: the initial stage and the main stage. For each stage, the optimum growth conditions comprising the substrate temperature, the growth rate, and the flux ratio have been found. The crystal quality and the transport properties of the layers have been analysed by the transmission electron microscopy, the double-crystal X-ray diffraction, and the Hall effect measurements. It has been demonstrated that epilayers grown under the optimum conditions have good structural and electrical properties.