MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates

Johnson, Mark A.; Fujita, Shizυo; Rowland, W. H.; Hughes, W. C.; He, Yanbo; El‐Masry, N. A.; Cook, J. W.; Schetzina, J. F.; Ren, Jingjian; Edmond, J. A.

doi:10.1007/bf02666638

Cited by 15 publications

(2 citation statements)

References 13 publications

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“…The Ga-polar is the common polarity, and the Ga-polar GaN film can be grown by the metal-organic chemical vapor deposition (MOCVD) or the molecular beam epitaxy (MBE) on the sapphire (0001), Si (111), or the SiC substrates. [4][5][6][7][8][9][10][11] And the growth and the application of Gapolar GaN have been studied extensively and deeply. [6,[11][12][13][14][15][16][17] On the other hand, the N-polar is the rare polarity, and the Npolar GaN film has many advantages over the Ga-polar GaN film.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Hu¹,

Song²,

Su³

et al. 2022

Chinese Phys. B

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Gallium nitride (GaN) thin film of the nitrogen polarity (N-polar) was grown on C-plane sapphire and misoriented C-plane sapphire substrates respectively by metal-organic chemical vapor deposition (MOCVD). The misorientation angle is off-axis from C-plane toward M-plane of the substrates, and the angle is 2° and 4° respectively. The nitrogen polarity was confirmed by examining the images of the scanning electron microscope before and after the wet etching in potassium hydroxide (KOH) solution. The morphology was studied by the optical microscope and atomic force microscope. The crystalline quality was characterized by the X-ray diffraction. The lateral coherence length, the tilt angle, the vertical coherence length, and the vertical lattice-strain were acquired using the pseudo-Voigt function to fit the X-ray diffraction curves and then calculating with four empirical formulae. The lateral coherence length increases with the misorientation angle, because higher step density and shorter distance between adjacent steps can lead to larger lateral coherence length. The tilt angle increases with the misorientation angle, which means that the misoriented substrate can degrade the identity of crystal orientation of the N-polar GaN film. The vertical lattice-strain decreases with the misorientation angle. The vertical coherence length does not change a lot as the misorientation angle increases and this value of all samples is near to the nominal thickness of the N-polar GaN layer. This study helps to understand the influence of the misorientation angle of misoriented C-plane sapphire on the morphology, the crystalline quality, and the microstructure of N-polar GaN films.

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Section: Introductionmentioning

confidence: 99%

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Hu¹,

Song²,

Su³

et al. 2022

Chinese Phys. B

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“…Here, a polarity inversion across the p‐GaN(000

\overset{1}{true}

)/ZnO(0001)’interface without any interface oxide was observed and the electronic band structure across the heterointerface was calculated (). It has also been shown that it is possible to grow both GaN and ZnO with similar crystal quality and surface morphology in the same MBE system, thus, allowing a straightforward and completely in situ process . Here, a smooth ZnO(0001) layer was achieved using a high O/Zn‐ratio and a low growth rate.…”

Section: Introductionmentioning

confidence: 99%

Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Adolph

Ive

2016

Phys. Status Solidi B

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We studied the effects of a varying O2 flow rate on the growth of ZnO(0001) and ZnO(000true1‾) layers on normalGaN/italicAl2O3 templates by plasma‐assisted molecular beam epitaxy. The O2 flow rate through the O‐plasma source was varied between 0.25 and 4.5 standard cubic centimeters per minute (sccm) corresponding to a growth chamber pressure between 3.0×10−6 and 5.0×10−5 Torr. We found that the change of the O2 flow rate had a profound effect on the ZnO layer growth rate. A maximum growth rate was reached for an O2 flow rate of 1.0–2.0 sccm. The same growth rate dependence on the O2 flow rate was observed for ZnO(0001) layers that were grown on GaN/4H‐SiC buffer layers for verification. To assess the amount of active O contributing to the ZnO‐growth, the spectral composition of the plasma was investigated with optical emission spectroscopy. The integrated optical emission line intensity reached a maximum for an O2 flow rate between 1.0 and 2.0 sccm. Essentially all emission lines exhibited a maximum intensity for an O2 flow rate between 1.0 and 2.0 sccm thus coinciding with the flow rate yielding the maximum growth rate.

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Growth and Growth Methods for Nitride Semiconductors

Morkoç̌

2008

Handbook of Nitride Semiconductors and Devices

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MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates

Cited by 15 publications

References 13 publications

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Growth and Growth Methods for Nitride Semiconductors

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MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates

Cited by 15 publications

References 13 publications

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD

Impact of O2flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy

Growth and Growth Methods for Nitride Semiconductors

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Product

Resources

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Impact of O₂flow rate on the growth rate of ZnO(0001) and ZnO(0001‾) on GaN by plasma-assisted molecular beam epitaxy