MBE growth and properties of ZnO on sapphire and SiC substrates

Johnson, Mark A.; Fujita, Shizυo; Rowland, W. H.; Hughes, W. C.; Cook, J. W.; Schetzina, J. F.

doi:10.1007/bf02666649

Cited by 198 publications

(52 citation statements)

References 14 publications

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“…Narrow emission due to the excitons was usually observed in the low-temperature PL spectra of ZnO bulk crystals and MBE-grown films. 13,14 The exciton peak of the MOVPE-grown film showed a FWHM value of 7 meV, comparable to 6 meV (11 K) from ZnO grown on r-Al 2 O 3 , 1.5 meV (2 K) from bulk ZnO, and 8.9 meV (4.2K) from ZnO grown on GaN/SiC. 11,13,14 In addition to the dominant exciton peak, a deep level emission band centered at 2.0 eV was also observed as indicated by an arrow in Fig.…”

Section: Resultsmentioning

confidence: 99%

Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al₂O₃(00·1)

Park

et al. 2001

J. Mater. Res.

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High-quality ZnO thin films were grown epitaxially at 250-550°C Al 2 O 3 (00и1) substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for the growth were diethylzinc and oxygen. Growth temperature, one of the important experimental parameters for epitaxial layers, was optimized. The films grown at 500°C exhibited good crystallinity and strong ultraviolet absorption and emission. Photoluminescence spectra of the films showed a dominant excitonic emission with a weak deep level emission. More importantly, a strong stimulated emission peak was observed even at room temperature.

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Section: Resultsmentioning

confidence: 99%

Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al₂O₃(00·1)

Park

et al. 2001

J. Mater. Res.

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“…For such device applications, advanced processes are required for the high-quality growth and highly efficient impurity doping. To date, MBE using oxygen-plasma cell [1], MOMBE using H 2 O vapor [2], PLD [3] etc. have been attractively studied to improve the structural and optoelectronic properties.…”

Section: Introductionmentioning

confidence: 99%

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

Yamauchi¹,

Imai²

2013

CSTA

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Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340˚C using Ti 2 O 3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.

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“…Recently, it has attracted considerable attention as a potential candidate material for ultraviolet and blue light-emitting diodes (LEDs) [9][10][11][12][13][14]. However, the development of such optoelectronic devices has been impeded by the fact that p-n homojunctions in ZnO have been extremely difficult to fabricate.…”

Section: Introductionmentioning

confidence: 99%

Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source

Guo

Tabata

Kawai

2001

Journal of Crystal Growth

234

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P-type ZnO films with carrier density 3-6 Â 10 18 cm À3 , resistivity 2-5 O cm and Hall mobility=0.1-0.4 cm 2 V À1 s À1have been grown on fused silica and glass substrate by pulsed laser reactive deposition using a pure metal Zn target in N 2 O plasma. The N acceptor doping was effectively enhanced using the active N formed by N 2 O gas passing through an electron resonance source during the pulsed laser reactive deposition process. P-type conduction was achieved by optimizing the microwave-input power (E) and deposition pressure (P N2O ). These electrical properties are sufficient for some practical applications. We expect this result to facilitate the fabrication of transparent p-n homojunctions suitable for light-emitting diodes. #

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MBE growth and properties of ZnO on sapphire and SiC substrates

Cited by 198 publications

References 14 publications

Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al₂O₃(00·1)

Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al₂O₃(00·1)

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source

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MBE growth and properties of ZnO on sapphire and SiC substrates

Cited by 198 publications

References 14 publications

Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00·1)

Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al2O3(00·1)

ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source

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Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al₂O₃(00·1)

Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al₂O₃(00·1)