MBE growth of high quality HgCdSe on GaSb substrates

Lei, Wen; Ren, Yuchen; Madni, Imtiaz; Umana‐Membreno, Gilberto A.; Faraone, Lorenzo

doi:10.1016/j.infrared.2018.05.024

Cited by 8 publications

(14 citation statements)

References 22 publications

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“…8(b), circular pits of 10-20 µm in size with a density of ∼ 2.2 × 10 3 cm −2 are observed on the surface of the HgCdSe epitaxial layers. [11] This etch pit density is three orders of magnitude lower than that of HgCdSe materials grown on ZnTe/Si substrates (1 × 10 6 -6 × 10 6 cm −2 ) reported previously, [17] and comparable to that of the GaSb substrate (∼low-10 3 cm −2 ). Such a low etch pit density is mainly due to the nearly lattice-matched growth of HgCdSe and ZnTe on GaSb, in comparison to the large-latticemismatched growth of HgCdSe and ZnTe on Si reported previously.…”

Section: Structural Characterizationmentioning

confidence: 58%

“…As currently there is no standard etchant for revealing the dislocations in HgCdSe, at UWA the etch pit density (EPD) measurements of HgCdSe were undertaken by using a 30 s etch for revealing dislocations in CdSe substrates. [11] As shown in Fig. 8(b), circular pits of 10-20 µm in size with a density of ∼ 2.2 × 10 3 cm −2 are observed on the surface of the HgCdSe epitaxial layers.…”

Section: Structural Characterizationmentioning

confidence: 79%

“…At the University of Western Australia (UWA), we develop the MBE process for growing highquality HgCdSe on GaSb, and explore its potential application in infrared detectors. [11,12] In this work, we will review our recent research efforts on developing HgCdSe infrared materials on GaSb substrates for making high-performance infrared detectors. At UWA, all HgCdTe samples are grown on GaSb (211)B substrates via MBE technique.…”

Section: Hgcdse Infrared Materials and Detectorsmentioning

confidence: 99%

“…Three-dimensional AFM images and lateral height profiles of HgCdSe epilayers grown under growth temperatures ranging from 70 • C to 120 • C. [12] (a) (b) tative SEM images of the HgCdSe surface after the 30 s EPD etch. [11] Inset of (a) shows the representative XRD rocking curve for HgCdSe grown under a growth temperature of 70 • C.…”

Section: Structural Characterizationmentioning

confidence: 99%

“…Apart from structural characterization, at UWA significant effort has been devoted to studying the optical properties of HgCdSe epilayers, mainly the cut-off wavelength of HgCdSe with various alloy compositions and under various temperatures. Figure 9(a) shows the FTIR transmission spectra of HgCdSe samples grown with different Se/Cd BEP ratios, which were measured at a temperature of 80 K. [11] It is observed that with increasing the Se/Cd BEP ratio from 6 to 018103-6 7.8, the corresponding cut-off wavelength of the Hg 1−x Cd x Se epilayer varies from 3.9 µm to 10.4 µm. This change of cutoff wavelength with varying the Se/Cd BEP ratio is caused by the corresponding change of the HgCdSe alloy composition.…”

Section: Optical Characterizationmentioning

confidence: 99%

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A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates

Zhang¹,

Pan²,

Liu³

et al. 2019

Chinese Phys. B

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We review our recent efforts on developing HgCdSe infrared materials on GaSb substrates via molecular beam epitaxy (MBE) for fabricating next generation infrared detectors with features of lower production cost and larger focal plane array format size. In order to achieve high-quality HgCdSe epilayers, ZnTe buffer layers are grown before growing HgCdSe, and the study of misfit strain in ZnTe buffer layers shows that the thickness of ZnTe buffer layer needs to be below 300 nm in order to minimize the generation of misfit dislocations. The cut-off wavelength/alloy composition of HgCdSe materials can be varied in a wide range by varying the ratio of Se/Cd beam equivalent pressure during the HgCdSe growth. Growth temperature presents significant impact on the material quality of HgCdSe, and lower growth temperature leads to higher material quality for HgCdSe. Typically, long-wave infrared HgCdSe (x = 0.18, cut-off wavelength of 10.4 µm at 80 K) presents an electron mobility as high as 1.3×10 5 cm 2 •V −1 •s −1 , a background electron concentration as low as 1.6×10 16 cm −3 , and a minority carrier lifetime as long as 2.2 µs. These values of electron mobility and minority carrier lifetime represent a significant improvement on previous studies of MBE-grown HgCdSe reported in the open literatures, and are comparable to those of counterpart HgCdTe materials grown on lattice-matched CdZnTe substrates. These results indicate that HgCdSe grown at the University of Western Australia, especially long-wave infrared can meet the basic material quality requirements for making high performance infrared detectors although further effort is required to control the background electron concentration to below 10 15 cm −3 . More importantly, even higher quality HgCdSe materials on GaSb are expected by further optimizing the growth conditions, using higher purity Se source material, and implementing postgrowth thermal annealing and defect/impurity gettering/filtering. Our results demonstrate the great potential of HgCdSe infrared materials grown on GaSb substrates for fabricating next generation infrared detectors with features of lower cost and larger array format size.

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Section: Structural Characterizationmentioning

confidence: 58%

Section: Structural Characterizationmentioning

confidence: 79%

Section: Hgcdse Infrared Materials and Detectorsmentioning

confidence: 99%

Section: Structural Characterizationmentioning

confidence: 99%

Section: Optical Characterizationmentioning

confidence: 99%

See 3 more Smart Citations

A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates

Zhang¹,

Pan²,

Liu³

et al. 2019

Chinese Phys. B

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Growth of GaSb Crystal and Evaluation of Its Thermoelectric Properties Along (111) Plane

Jin

Zhou

Zhang

et al. 2019

Crystal Research and Technology

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In this study, group III–V compound semiconductor gallium antimonide (GaSb) crystal is grown by the vertical Bridgman technique. A (111) twinning is generated in the as‐grown crystal due to its polarity behavior as the GaSb crystal has a zinc‐blende structure. Hall effect measurements illustrate that the as‐grown GaSb crystal has n‐type semiconductor behavior among the whole temperature range, and the carrier concentration reaches the highest value of 3.27 × 1018 cm3 at 900 K. Thermoelectric behavior of GaSb crystals along the (111) plane is investigated. It shows the lowest electrical conductivity of 53.2 S cm−1 and the highest Seebeck coefficient of −470.0 µV K−1 at 700 K. However, the largest power factor of 13.7 µW cm K−2 takes place at 600 K. For thermal conductivity (k), the k value always decreases with increasing temperature, and the lowest k that occurred at around 900 K is about 7.44 W m−1 K−1. Finally, a maximum figure of merit of 0.082 is obtained at 700 K.

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