MBE growth of highly strained InGaPN/GaPN quantum well with high indium content

Band alignments of InGaPN/GaPN quantum well structures on GaP and Si

“…The well and barrier widths were measured to be 2.5 and 25.0 nm for sample A and 2.5 and 18.5 nm for sample B, respectively. Detailed discussions on crystalline quality and luminescence properties for the InGaPN/GaPN SQWs are described elsewhere [14].…”

“…On the other hand, the bandgap energy of the InGaPN QW decreases significantly by increasing N compositions as for InGaAsN alloys. In addition, the bandgap energy decreases with the increase in In composition [14,15]. Thus, the band offset between an InGaPN well and a GaPN barrier depends on N and In compositions.…”

III–V epitaxy on Si for photonics applications

“…We grew an In 0.33 Ga 0.67 P 0.984 N 0.016 /GaP 0.982 N 0.012 strained multi-quantum well structure (MQW) on a GaP substrate at 500 1C by MBE [18]. Five-period MQW consisted of 2.5 nm-thick InGaPN wells and 25 nm-thick GaPN barriers.…”

“…InGaPN/GaPN MQW with a high In content of 33%[18]. (a) An XTEM micrograph was observed with the (2 0 0) reflection.…”

Effects of Pressure on GaAs/InxGa1-xAs/AlAs Resonant Tunneling Structures

“…In recent years, with rapid developments in molecular beam epitaxy (MBE) and metallorganic chemical vapor deposition (MOCVD) and the technologies of etching methods, many types of quantum well material can be grown and fabricated. (1)(2)(3) A resonant tunneling diode (RTD) is an example of such quantum well material with a negative differential resistance (NDR) effect on the current-voltage (I-V) characteristics, and it has been widely used in electronic and photonic devices over the last decade. Oscillations of up to 712 GHz have been reported and several applications of RTD for multivalued logic have been proposed; (4)(5)(6) the latter focused on the utilization of the unique electronic and optic properties of these devices for lasers, detectors and modulators in the infrared-to-visible wavelength range, (7,8) and high-speed optically switched electronic devices.…”