2009
DOI: 10.1016/j.jcrysgro.2008.09.110
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MBE growth of Mn-doped ZnSnAs2 thin films

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Cited by 46 publications
(26 citation statements)
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“…Very recently, we revealed that ZnSnAs 2 grown epitaxially films on substrate with an orientation relationship with respect to the substrate as (001) ZnSnAs 2 ∥(001) InP and [100] ZnSnAs 2 ∥[100] InP [5] and lightly Mn-doped ZnSnAs 2 and ~4% Mn-doped ZnSnAs 2 epitaxially thin films show room temperature ferromagnetism [6,7]. This result makes us develop an integration with future InPbased optoelectronic devices with function of spin polarization.…”
mentioning
confidence: 97%
“…Very recently, we revealed that ZnSnAs 2 grown epitaxially films on substrate with an orientation relationship with respect to the substrate as (001) ZnSnAs 2 ∥(001) InP and [100] ZnSnAs 2 ∥[100] InP [5] and lightly Mn-doped ZnSnAs 2 and ~4% Mn-doped ZnSnAs 2 epitaxially thin films show room temperature ferromagnetism [6,7]. This result makes us develop an integration with future InPbased optoelectronic devices with function of spin polarization.…”
mentioning
confidence: 97%
“…More recently, ternary ferromagnetic II-IV-V 2 compounds crystallizing in the chalcopyrite structure are of special interest for potential applications in spintronic devices, owing to their roomtemperature ferromagnetism [4][5][6]. Among the II-IV-V 2 chalcopyrites, we have proposed a Mn-doped ZnSnAs 2 thin film showing ferromagnetism at room temperature as a ferromagnetic building block in InP-based spintronics [7][8][9]. ZnSnAs 2 is a member of the II-IV-V 2 pnictide semiconductors, these kinds of thin films are known to crystallize into either chalcopyrite or sphalerite structures depending on the growth conditions [10].…”
mentioning
confidence: 99%
“…In-situ reflection high-energy electron diffraction (RHEED) was used to monitor the film quality during the growth. Details of the growth process have been described elsewhere [8,11]. The crystalline structure of the grown films was characterized using high-resolution X-ray diffraction (HR-XRD), and superconducting quantum interference device (SQUID) magnetometry was used to investigate the magnetic properties of the Mn-doped ZnSnAs 2 thin films.…”
mentioning
confidence: 99%
“…As the alternative ferromagnetic semiconductors, II-IV-V 2 chalcopyrite semiconductors such as CdGeP 2 [5], CdGeAs 2 [6] and ZnSnAs 2 [7][8] have been shown to become ferromagnetic by Mn doping, and have Curie temperatures higher than 300 K. A bulk-type ZnSnAs 2 crystal doped with Mn has been experimentally shown to be ferromagnetic at a high Curie temperature [7]. The magnetic ion Mn, which occupies the cation IV site in host chalcopyrite or zinc-blende (sphalerite) structures, has a local spin and at the same time acts as an acceptor.…”
Section: Introductionmentioning
confidence: 99%
“…The magnetic ion Mn, which occupies the cation IV site in host chalcopyrite or zinc-blende (sphalerite) structures, has a local spin and at the same time acts as an acceptor. Very recently, ZnSnAs 2 :Mn thin films have been epitaxially grown on InP (001) without any secondary phases, and have shown room-temperature ferromagnetism [8][9][10]. Both experimentally and theoretically, ZnSnAs 2 is probably regarded as a "vertical GaAs" to some extent, consisting of two interposing zincblende lattices, while permitting a high degree of Mn incorporation because Mn 2+ ions may easily substitute on the group II Zn sites.…”
Section: Introductionmentioning
confidence: 99%