MBE growth of reliable high-power lasers with InGaAsP quantum well

Kuang, G.K.; Hernández, Iván Coto; McElhinney, M.; Zeng, L.; Caliva, Brian; Walker, Raymond W.

doi:10.1016/j.jcrysgro.2004.04.030

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“…This is because the larger band gap of AlGaInP compared with that of GaInP can more effectively block the carrier overflow from the active layer to the cladding layer [5]. Therefore, Al-free active-region InGaAsP/GaInP/AlGaInP lasers have the advantages of both high reliability and good temperature characteristics [5][6][7][8]. InGaAsP/AlGaInP 0.8 mm lasers are usually grown by metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy.…”

Section: Introductionmentioning

confidence: 99%

InGaAsP/GaInP/AlGaInP 0.8μm QW lasers grown by MOCVD using TBP and TBAs

Dong

Teng

Chua

et al. 2005

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

InGaAsP/GaInP/AlGaInP 0.8μm QW lasers grown by MOCVD using TBP and TBAs

Dong

Teng

Chua

et al. 2005

Journal of Crystal Growth

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Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching

Zhao

Jiang

et al. 2015

J. Semicond.

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The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and AlGaInP in various solutions is evaluated. As a result, the etching solutions simultaneously corroding InGaP and AlGaInP layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.

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MBE growth of reliable high-power lasers with InGaAsP quantum well

Cited by 2 publications

References 7 publications

InGaAsP/GaInP/AlGaInP 0.8μm QW lasers grown by MOCVD using TBP and TBAs

InGaAsP/GaInP/AlGaInP 0.8μm QW lasers grown by MOCVD using TBP and TBAs

Fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching

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