MBE Growth of Thick InGaAsN Layers Lattice-Matched to InP Substrates

Miura, K.; Nagai, Y.; Iguchi, Yasuhiro; Tsubokura, M.; Okada, Hironao; Kawamura, Y.

doi:10.1109/iciprm.2007.381202

Cited by 1 publication

(2 citation statements)

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“…However, there have been few studies for characterization of InGaAsN and/or InGaAsSbN layers on InP [1][2][3]. We already reported the effects of growth temperature and As/III flux ratio on crystalline quality of InGaAsN layers on InP [4], and nitrogen composition dependences of photoluminescence and photo-reflectance characteristics of the InGaAsN layers on InP [5]. We also investigated that the surface morphology and the crystalline quality of the InGaAsSbN layer grown on InP were superior to those of InGaAsN layer by using atomic force microscopy and Xray diffraction measurements [6].…”

Section: Generalmentioning

confidence: 95%

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Characterization of InGaAsSbN layers grown on InP by MBE

Yoshikawa

Miura

Iguchi

et al. 2011

Phys. Status Solidi (c)

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Optical and electrical properties of the InGaAsSbN layers grown by molecular beam epitaxy (MBE) on InP substrates were studied in comparison with InGaAsN layers. It was found that the optical properties of the InGaAsSbN layer characterized by photoreflectance (PR) and photoluminescence (PL) measurements are superior to those of InGaAsN layer. In addition, electrical properties characterized by Hall measurements were also improved by adding Sb atoms. Annealing studies on photoluminescence properties of the InGaAsSbN layer revealed that the PL intensity increases and the PL spectral half width decreases upon annealing up to 700 °C. These results indicate that post‐annealing is still necessary for InGaAsSbN layers to improve crystalline quality (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Generalmentioning

confidence: 95%

“…In, Ga and Al metals were used for group III beam sources. Tetramers As 4 and Sb 4 were used for group V sources. The nitrogen was supplied using an electron cyclotron resonance (ECR) plasma source with the power of 40 W. Nitrogen gas flow rate was fixed at 0.7 sccm.…”

Section: Methodsmentioning

confidence: 99%