MBE growth of ZnCdSe/ZnCdMgSe quantum-well infrared photodetectors

Abstract

Articles you may be interested inNear infrared intersubband absorption of CdSe/MgSe quantum wells grown on InP substrate with an InAlAs buffer layer J. Vac. Sci. Technol. B 32, 02C105 (2014); 10.1116/1.4863496 Metastable CdSe/MgSe quantum wells prepared by MBE with near IR intersubband absorption Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substratesThe authors report the growth of quantum well infrared photodetectors (QWIPs) made from wide band gap II-VI semiconductors. ZnCdSe/ZnCdMgSe QWIPs in both medium-wave infrared and long-wave infrared regions were grown by molecular beam epitaxy on InP substrates. High-resolution x-ray diffraction and photoluminescence measurements showed that the as-grown samples have high structural and optical quality. Spectral responses with peaks at 8.7 lm and 4.0 lm have been obtained.

Growth and characterization of ZnCdSe/ZnCdMgSe two‐color quantum well infrared photodetectors

“…Recently, we have shown that selenide-based wide band gap II-VI semiconductors are attractive alternatives for intersubband (ISB) devices, especially those working in the short wavelength range [13][14][15][16]. We have demonstrated that QWIPs with high performance can also be fabricated from ZnCdSe/ZnCdMgSe multiple quantum wells (MQWs) [17][18][19]. ZnCdMgSe can be grown lattice-matched on InP substrates with a large tuneable band gap (from 2.1 to 3.5 eV).…”

Intersubband absorption in ZnO/ZnMgO quantum wells grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates

“…ISB devices are unipolar devices, in which electron (or hole) transitions happen between energy subbands within the conduction (or valence) band and only one kind of conduction carriers are needed. Since the observation of ISB transitions in semiconductor quantum wells (QWs) [3], various ISB devices such as quantum cascade lasers [4][5][6], quantum-well infrared photodetectors [7][8][9][10][11], and all-optical switches [12,13] have been fabricated. The mature technology for achieving high n-type doping in ZnO makes it possible to employ ZnO-based heterostructures in ISB devices.…”