1989
DOI: 10.1002/jcc.540100305
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MC‐SCF and CI calculations on the Si4H4 system

Abstract: The lowest singlet along with selected high spin states of three isomers of Si,H, have been investigated, using highly correlated wave functions in conjunction with a local pseudopotential approach. Tetrasilabicyclo[ I.. l.O]but-l(3)-ene 1 and tetrasilatetrahedrane 3a are established as true minima by means of the harmonic vibrational frequencies. The local minimum for tetrasilacyclobutadiene is not a planar 2a but a puckered conformer 2b. Isomer 1 was found to be the most stable of the investigated isomers ly… Show more

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Cited by 20 publications
(12 citation statements)
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“…Them olecular structure of 1 was further examined by theoretical calculations.T he structural characteristics of 1, optimized at the B3PW91-D3/B1 (B1: 6 -311G(d) [Si]a nd 6-31G(d) [C,H]) level of theory (1 opt ), is in good agreement with those obtained experimentally:the planar geometry of the Si 4 moiety (dihedral angle Si2-Si1-Si1*-Si2* = 180.08 8)a nd the Si1ÀSi1* (2.4671 ), Si1ÀSi2 (2.2834 ), Si1-Si2* (2.3100 ) distances are close to those obtained from the XRD analysis [180.08 8;2 .4716(11) ,2 .2949 (3) ,a nd 2.3106(4) ,r espectively].T he planar Si 4 framework of 1 should be due to the severe steric demand of the substituents on the saturated silicon atoms as the optimized structures of hydrido-, methyl-, and butan-1,4-diyl-substituted bicyclo[1.1.0]tetrasil-1(3)-enes 1 H , 1 Me ,a nd 1 BD (Figure 4) adopt bent structures at the B3PW91-D3/6-311G(d) level of theory similar to the structures of previously reported 1 H [22] and D. [11] Thedihedral angle increases with increasing steric demand of the substituents on the saturated silicon atoms (1 H :1 42.78 8; Yates et al [22b] Thef ree-energy difference between the bent and planar structures,w hich corresponds to the activation barrier for ring flipping,are very small and decrease with increasing steric demand of the substituents (1 H :1 2.9 kJ mol À1 , 1 Me :7 .3 kJ mol À1 , 1 BD : 5.7 kJ mol À1 ). Thei ntrinsic shallow potential for the bending of the Si 4 moiety in bicyclo[1.1.0]tetrasil-1(3)-ene and the presence of the bulky iPrMe 2 Si groups are likely responsible for the observed planar Si 4 moiety.T he stabilization of transition-state structures for ring flipping due to the presence of bulky substituents has been examined in detail for 1,3dibora-2,4-diphosphabicyclo[1.1.0]butane derivatives.…”
Section: Communicationssupporting
confidence: 84%
“…Them olecular structure of 1 was further examined by theoretical calculations.T he structural characteristics of 1, optimized at the B3PW91-D3/B1 (B1: 6 -311G(d) [Si]a nd 6-31G(d) [C,H]) level of theory (1 opt ), is in good agreement with those obtained experimentally:the planar geometry of the Si 4 moiety (dihedral angle Si2-Si1-Si1*-Si2* = 180.08 8)a nd the Si1ÀSi1* (2.4671 ), Si1ÀSi2 (2.2834 ), Si1-Si2* (2.3100 ) distances are close to those obtained from the XRD analysis [180.08 8;2 .4716(11) ,2 .2949 (3) ,a nd 2.3106(4) ,r espectively].T he planar Si 4 framework of 1 should be due to the severe steric demand of the substituents on the saturated silicon atoms as the optimized structures of hydrido-, methyl-, and butan-1,4-diyl-substituted bicyclo[1.1.0]tetrasil-1(3)-enes 1 H , 1 Me ,a nd 1 BD (Figure 4) adopt bent structures at the B3PW91-D3/6-311G(d) level of theory similar to the structures of previously reported 1 H [22] and D. [11] Thedihedral angle increases with increasing steric demand of the substituents on the saturated silicon atoms (1 H :1 42.78 8; Yates et al [22b] Thef ree-energy difference between the bent and planar structures,w hich corresponds to the activation barrier for ring flipping,are very small and decrease with increasing steric demand of the substituents (1 H :1 2.9 kJ mol À1 , 1 Me :7 .3 kJ mol À1 , 1 BD : 5.7 kJ mol À1 ). Thei ntrinsic shallow potential for the bending of the Si 4 moiety in bicyclo[1.1.0]tetrasil-1(3)-ene and the presence of the bulky iPrMe 2 Si groups are likely responsible for the observed planar Si 4 moiety.T he stabilization of transition-state structures for ring flipping due to the presence of bulky substituents has been examined in detail for 1,3dibora-2,4-diphosphabicyclo[1.1.0]butane derivatives.…”
Section: Communicationssupporting
confidence: 84%
“…Isomer 10 , which is the lowest energy structure for Si 4 H 4 , so far, is also computed in the present study . It is a minimum for C, Ge, Sn, and Pb as well.…”
Section: Resultsmentioning
confidence: 79%
“…There are many theoretical calculations available in the literature on 1-C and 1- Si . , Structure 1 is a minimum for C to Pb, except for Si, in which it is a second order saddle point (Table ). However, the results at the HF and B3LYP levels are different.…”
Section: Resultsmentioning
confidence: 99%
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“…With inclusion of electron correlation through the configuration interaction (CI) method, the lowest‐energy isomer is found to be a D 2d puckered ring structure with four equal SiSi bond lengths and an axial arrangement of the hydrogen atoms. This structure is predicted to lay 28 kcal mol −1 below the previously reported tetrasilatetrahedrane 89–98. Detailed study of structures and electron affinities of Si 4 H n ( n = 2–10) and Si italicn ( n = 3–7) have been carried out 98, 99 using density functional theory (DFT).…”
Section: Introductionmentioning
confidence: 87%