mcSi and CdTe solar photovoltaic challenges: Pathways to progress

Ghosh, Bablu K.; Saad, Ismail; Teo, Kenneth Tze Kin; Ghosh, Swapan K.

doi:10.1016/j.ijleo.2020.164278

Cited by 13 publications

(7 citation statements)

References 125 publications

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“…As wide research achievements and industrial developed renewable energy technology, inorganic solar photovoltaic (SPV) e ciency progression is still demanding to make it more client and production favor in energy sector. Most marketable solar photovoltaic advancement pathways towards selective contact design for less opto-electrical losses are pondered in our recent review [1]. Industrial Si and CdTe solar cells are possessed least energy payback time as it can be seen from gure 1.…”

Section: Introductionmentioning

confidence: 99%

TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

Ghosh

Saad

Mahmood³

2021

Preprint

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CdTe thin film (TF) solar cells are most promising in commercial stage photovoltaic (PV) technologies. Cell contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. Thin film PV cells voltage and fill factor loss lessening purpose carrier selective back contact selection with band matching interface layers are essential. Beside that buffer and active layer thickness selection is vital for field assisted selective carrier collection. The suitable emitter or buffer layer thickness and band gap matching to the active layer is potential to lessen parasitic absorption and shallow recombination loss. In this purpose SCAPS software based ZnO and SnO2 TCO as well as CdS and CdSe buffer impact are numerically analyzed. The TCO, emitter, back surface field layer and metal contacts effects on electrical performance is studied. In the model, TCO and back contact barrier thickness is shown significant to progress electrical performance. Eventually, open circuit voltage Voc = 0.9757 V and 19.92% efficiency is achieved for 90 nm of ZnTe BSF with ZnO TCO and CdS emitter layer of optimized thickness.

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Section: Introductionmentioning

confidence: 99%

TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

Ghosh

Saad

Mahmood³

2021

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

Ghosh

Saad

Mahmood³

2021

Preprint

Self Cite

View full text Add to dashboard Cite

CdTe thin film (TF) solar cells are most promising in commercial stage photovoltaic (PV) technologies. Cell contacts and interface defects related opto-electrical losses are still vital to limit its further technological benefit. Thin film PV cells shallow recombination and parasitic loss lessening purpose carrier selective back contact selection with band matching interface layers are essential. Beside that layer thickness selection is vital for field assisted selective carrier collection. The suitable emitter and buffer layer selection with band gap matching to the active layer can lessen parasitic absorption loss. In this purpose SCAPS software based ZnO and SnO2 TCO as well as CdS and CdSe buffer impact are numerically analyzed. The TCO, emitter, back surface field and metal contacts effects on electrical performance is studied. In the model, TCO and back contact barrier thickness is shown significant to progress electrical performance. Eventually, open circuit voltage Voc = 0.9757 V and 19.92% efficiency is achieved for 90 nm of ZnTe BSF with ZnO TCO and CdS emitter layer of optimized thickness.

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“…Furthermore, these two issues are related. Therefore, many research groups are focusing on the study of film photovoltaic cells, which are increasingly competing with traditional silicon [2][3]. II-VI semiconductor group has potential applications in solar cell, light-emitting diodes and efficient thin film transistors [4].…”

Section: Introductionmentioning

confidence: 99%

First-Principles Calculations of Stable Geometric Configuration and Thermodynamic Parameters of Cadmium Sulfide Thin-Film Condensates

Oleksyn

Naidych

Chernikova

et al. 2021

Phys. Chem. Solid St.

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Thin-film CdS layers obtained by the open evaporation method in vacuum are considered and cluster models for calculation of crystal, band structure and thermodynamic parameters are proposed. The thermodynamic parameters of the formation energy ΔE, enthalpy of formation ΔH, Gibbs energy ΔG, entropy ΔS and specific heat capacities at constant pressure and volume for cubic and hexagonal crystallographic modifications are determined. The stable crystal structure for cadmium sulfide was determined from the analysis of Gibbs energy temperature dependences for the sphalerite and wurtzine phases.

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mcSi and CdTe solar photovoltaic challenges: Pathways to progress

Cited by 13 publications

References 125 publications

TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

TCO and back contact buffer significance to achieve highest open circuit voltage and efficiency of CdTe solar cells

First-Principles Calculations of Stable Geometric Configuration and Thermodynamic Parameters of Cadmium Sulfide Thin-Film Condensates

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