We report measurements of a new type of magnetoresistance in Pt and Ta thin films. The spin accumulation created at the surfaces of the film by the spin Hall effect decreases in a magnetic field because of the Hanle effect, resulting in an increase of the electrical resistance as predicted by Dyakonov [PRL 99, 126601 (2007)]. The angular dependence of this magnetoresistance resembles the recently discovered spin Hall magnetoresistance in Pt/Y 3 Fe 5 O 12 bilayers, although the presence of a ferromagnetic insulator is not required. We show that this Hanle magnetoresistance is an alternative, simple way to quantitatively study the coupling between charge and spin currents in metals with strong spin-orbit coupling.Spin-orbit interaction is an essential ingredient in materials and interfaces, offering the possibility to exploit the coupling between spin and orbital degrees of freedom of electrons in spintronic devices [1,2]. Of utmost importance are the spin Hall (SHE) and inverse spin Hall (ISHE) effects, which convert charge currents into transverse spin currents and vice versa, allowing us to create and detect spin currents in materials with strong spin-orbit coupling (SOC) [3][4][5][6][7][8]. In this framework, a new type of magnetoresistance (MR), spin Hall magnetoresistance (SMR), was discovered in nonmagnetic (NM) metal/ferromagnetic insulator (FMI) bilayers [9][10][11][12][13][14][15][16]. SMR arises from the simultaneous effect of SHE and ISHE in the NM layer -which leads to a decrease in its resistance-combined with the presence of a FMI at one of