Mean-Square Atomic Displacements in HgTe and Their Temperature Dependence

Skelton, E. F.; Radoff, P. L.; Bolsaitis, P.; Verbalis, A.

doi:10.1103/physrevb.5.3008

Cited by 30 publications

(7 citation statements)

References 14 publications

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“…The investigation of the pressure and temperature dependence of the energy gaps in semiconductors has been the subject of many studies [22][23][24][25][26][27][28][29][30]. Boucenna et al [14] were investigated the influence of pressure (0-20 kbar) and temperature (0-300 K) on the electronic band parameters for zinc-blende Al x Ga 1À x As.…”

Section: Introductionmentioning

confidence: 99%

“…Several methods have been developed to calculate the band structure of semiconductors, among them is the so called empirical pseudo-potential method (EPM) [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34]. In the EPM method, the core electrons are tightly bound to their nuclei and the valence electrons are influenced only by a weak net effective potential called pseudopotential i.e., the large attractive core potential energy of the ion core is cancelled by the large positive kinetic energy of the electron due to its rapid oscillations [18][19][20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

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Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys

Degheidy¹,

Elkenany²

2012

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys

Degheidy¹,

Elkenany²

2012

Materials Science in Semiconductor Processing

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“…Guenzer & Bienenstock (1971) provide experimentally determined relationships between the mean square displacements for Hg and Te in HgTe and temperature which yield, at 293 K, BHg=2-8 and B.r =2.0 A2. Skelton, Radoff, Bolsaitis & Verbalis (1972) have determined the Debye-Waller factors (actually converted from their mean square displacements) at 296 K to be BHg=2.3 (+0.9,-0.2) and BTe = 1.7 (+0.4, --0.2) A2. Reid (1983) has presented lattice-dynamical calculations (using various models) of Debye-Waller factors for various materials with the zincblende structure, including CdTe and HgTe.…”

Section: M= E W(ifo L-ifc I) =mentioning

confidence: 99%

Structural aspects of MOCVD-grown Hg1−xCdxTe layers on novel GaAs substrates

Stevenson¹,

Gao²,

Pain³

et al. 1991

Acta Cryst Sect A

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X-ray diffraction studies of six samples of metal organic chemical vapour deposition (MOCVD)grown Hgl_xCdxTe on novel GaAs substrates have been carried out. The six GaAs substrates have (311), (~ii), (511), (51f), (711) and (711) orientations. The absolute polarities of the six substrates, initially unknown, have been determined by X-ray anomalous scattering (after the layers were deposited). The orientations and absolute polarities of the six Hg~_xCdxTe layers have similarly been determined and follow the substrates. An extensive set of integrated-intensity data has been collected from the (311) Hg~_xCdxTe layer, which is of the order of 1 Ixm in thickness. Least-squares analysis of these data yields information about the thermal vibrations of the atomic species, extinction effects and the average composition of the Hg~_xCdxTe layer. Some results of double-crystal rocking-curve measurements for each of the six samples are also reported. The Rutherford backscattering of 2 MeV He ions has been used to determine independently the absolute polarity, composition and quality of the (311) and (311) Hg~_xCd,,Te layers. ExperimentalThe MCT layers were grown in an MR Semicon Quantax 226 MOCVD reactor. The (2 in) GaAs substrates, supplied by Wacker-Chemitronic GMBH, Germany, were polished on both sides and of nominal (311), (511) and (711) orientations. The substrates were halved and one half was inverted in the reactor prior to deposition of the MCT la_yers, i.e. MCT layers were grown on (n 11) and (~11) GaAs substrates placed side by side in the reactor, for n = 3, 5 and 7

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“…Since energy-dispersive X-ray diffraction was introduced (Giessen & Gordon, 1968;Buras, Chwaszczewska, Szarras & Szmid, 1968), it has been applied to various problems. The method can be used for powder measurements (Chwaszczewska, Szarras, Szmid & Szymczak, 1971;Szpumar, Ojanen & Laine, 1974) and for single-crystal investigations (Buras, 1971;Fukamachi, Togawa & Hosoya, 1973;Skelton, Radoff, Bolsaitis & Verbalis, 1972;Buras, Olsen, Gerward, Selsmark & Lindegaard-Andersen, 1975;Skelton, 1976;Sakamaki, Hosoya & Inkamaki, 1980). As the details of the method have been extensively reported (Olsen, Buras, Jensen, Alstrup, Gerward & Selsmark, 1978;Buras, Nimura & Olsen, 1978;Skelton, 1976), we describe in this paper only the advantages with regard to its application to the Debye-Waller-factor (DWF) measurements of D in Ta single crystals (cx phase), i.e.…”

Section: Introductionmentioning

confidence: 99%

Application of the Energy-Dispersive X-ray diffraction method to determine static and dynamic displacements close to D in Ta single crystals

Steyrer¹,

Metzger²,

Peisl³

1984

J Appl Cryst

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The energy-dispersive X-ray diffraction method has been used to measure integrated Bragg intensities from TaDx single crystals as a function of D concentration and scattering vector. The observed attenuation can be described in terms of a thermal and a static Debye-Waller factor (DWF). From the static DWF, for small scattering vectors, the displacements ut = 0"095 (5) A of the four Ta atoms closest to the D atom are obtained and, for large scattering vectors, the change of the mean-square thermal displacement of these atoms Av2= -[5-5 (3)] x 10 -4 A 2.

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Mean-Square Atomic Displacements in HgTe and Their Temperature Dependence

Cited by 30 publications

References 14 publications

Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys

Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys

Structural aspects of MOCVD-grown Hg1−xCdxTe layers on novel GaAs substrates

Application of the Energy-Dispersive X-ray diffraction method to determine static and dynamic displacements close to D in Ta single crystals

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