The mean square atomic displacements, 〈U2〉, in A and B sublattices of A3B5, A2B6, and A4B6 compounds are measured at 100 to 300 K. The measured values of 〈U2〉 and enthalpy together with literature data for vacancy formation in Si, Ge, PbTe, and PbS are used to estimate the empirical coefficients which connect those parameters in compounds with NaCl and sphalerite‐type crystal lattices. The obtained coefficients allow to determine the enthalpy of vacancy formation in some A3B5, A2B6, and A4B6 compounds. For example, the energy for the formation of an arsenic vacancy in GaAs is 2 eV which coincides well with literature data. It is found that the enthalpy of Schottky defect formation decreases but the difference in the enthalpy values of the sublattice vacancy formation raises with increasing ionicity in the series of isoelectronic compounds with Ge and Sn.