Measurement and Compact Modeling of 1/f Noise in HV-MOSFETs

Statistical charge-based modeling of 1/f noise in standard and high-voltage MOS transistors

“…At this point it should be noted that there are cases such as HV-MOSFETs where there are no available 1/f noise models in literature and this was one of the innovative scopes of this Thesis. A new physical charge-based 1/f noise compact model for HV-MOSFETs is proposed [27] based on the recently established EKV3 1/f noise model mentioned above. One of the main aspects of this work was to investigate and reveal, if any, additional 1/f noise sources which are not present at LV-MOS transistors and then model them in a sufficient way.…”

“…The main scope of this work was to investigate and model the contribution of drift region in 1/f noise. This goal was accomplished and a new complete charge-based 1/f noise compact model was recently published for the first time [27,34,35].…”

“…In this section, our recently established charge-based 1/f noise model for LD-MOS [27] is presented. As mentioned before this model is both compact and complete and this is something shown for the first time.…”

“…Recent work has shown that this is not the case since the characteristics of 1/f noise in LDMOS are significantly different than standard LV-MOSFETs due to additional noise mechanisms which arise in the extended drain region and more specifically in the extension of gate oxide in the drift region [193,194]. Scope of our work was to develop a new complete compact 1/f noise model for LDMOS transistors for the first time and this task was accomplished [27].…”

“…After this introduction, the fundamental physical procedure that generates 1/f noise in LDMOS is presented [193,194,195] with giving attention to the lack of complete compact models [196,197,198]. After that, the 1/f noise measurement setup as well as the devices under test are presented thoroughly and then we focus on the development of our complete 1/f noise compact model for LDMOSFETs [27] which is charge-based in agreement with EKV3 formulation. The model validation for a wide range of devices, dimensions and operating conditions follows [34] whereas, a detailed 1/f noise parameter extraction procedure which was proposed both for the LV channel of the device [199] as well as for the whole transistor including drift region contribution to flicker noise [35] is presented.…”